Grain-Boundary Magnetoresistance of CrO2 Films Grown on TiO 2-Buffered LaAlO3 Substrates

S. J. Liu; J. Y. Juang; K. H. Wu; T. M. Uen; Y. S. Gou; J. Y. Lin

Grain-Boundary Magnetoresistance of CrO₂ Films Grown on TiO ₂-Buffered LaAlO₃ Substrates

S. J. Liu^*, J. Y. Juang, K. H. Wu, T. M. Uen, Y. S. Gou, J. Y. Lin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The magnetic and magnetotransport properties of predominantly (110)-oriented CrO₂ films grown on TiO₂-buffered LaAlO₃ substrates were investigated. The atomic force microscopic images revealed that the as-grown CrO₂ films are granular. The magnetic measurements indicated that in-plane coercive fields are about 60 Oe and 100 Oe at 300 K and 7 K, respectively. The as-grown films are semiconductive below 75 K; a magnetoresistance with a ΔR/R₀ ratio of -13 % in a magnetic field of 5 T was observed at 5 K, which is absent in high-quality epitaxial films. The coincidence between the coercive field and the peaks of the magnetoresistive loop measured at low temperatures indicates that spin-dependent scattering plays a crucial role in the transport properties.

Original language	English
Pages (from-to)	406-413
Number of pages	8
Journal	Chinese Journal of Physics
Volume	41
Issue number	4
Publication status	Published - 2003 Aug
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

Cite this

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title = "Grain-Boundary Magnetoresistance of CrO2 Films Grown on TiO 2-Buffered LaAlO3 Substrates",

abstract = "The magnetic and magnetotransport properties of predominantly (110)-oriented CrO2 films grown on TiO2-buffered LaAlO3 substrates were investigated. The atomic force microscopic images revealed that the as-grown CrO2 films are granular. The magnetic measurements indicated that in-plane coercive fields are about 60 Oe and 100 Oe at 300 K and 7 K, respectively. The as-grown films are semiconductive below 75 K; a magnetoresistance with a ΔR/R0 ratio of -13 % in a magnetic field of 5 T was observed at 5 K, which is absent in high-quality epitaxial films. The coincidence between the coercive field and the peaks of the magnetoresistive loop measured at low temperatures indicates that spin-dependent scattering plays a crucial role in the transport properties.",

author = "Liu, {S. J.} and Juang, {J. Y.} and Wu, {K. H.} and Uen, {T. M.} and Gou, {Y. S.} and Lin, {J. Y.}",

year = "2003",

month = aug,

language = "English",

volume = "41",

pages = "406--413",

journal = "Chinese Journal of Physics",

issn = "0577-9073",

publisher = "Physical Society of the Republic of China",

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TY - JOUR

T1 - Grain-Boundary Magnetoresistance of CrO2 Films Grown on TiO 2-Buffered LaAlO3 Substrates

AU - Liu, S. J.

AU - Juang, J. Y.

AU - Wu, K. H.

AU - Uen, T. M.

AU - Gou, Y. S.

AU - Lin, J. Y.

PY - 2003/8

Y1 - 2003/8

N2 - The magnetic and magnetotransport properties of predominantly (110)-oriented CrO2 films grown on TiO2-buffered LaAlO3 substrates were investigated. The atomic force microscopic images revealed that the as-grown CrO2 films are granular. The magnetic measurements indicated that in-plane coercive fields are about 60 Oe and 100 Oe at 300 K and 7 K, respectively. The as-grown films are semiconductive below 75 K; a magnetoresistance with a ΔR/R0 ratio of -13 % in a magnetic field of 5 T was observed at 5 K, which is absent in high-quality epitaxial films. The coincidence between the coercive field and the peaks of the magnetoresistive loop measured at low temperatures indicates that spin-dependent scattering plays a crucial role in the transport properties.

AB - The magnetic and magnetotransport properties of predominantly (110)-oriented CrO2 films grown on TiO2-buffered LaAlO3 substrates were investigated. The atomic force microscopic images revealed that the as-grown CrO2 films are granular. The magnetic measurements indicated that in-plane coercive fields are about 60 Oe and 100 Oe at 300 K and 7 K, respectively. The as-grown films are semiconductive below 75 K; a magnetoresistance with a ΔR/R0 ratio of -13 % in a magnetic field of 5 T was observed at 5 K, which is absent in high-quality epitaxial films. The coincidence between the coercive field and the peaks of the magnetoresistive loop measured at low temperatures indicates that spin-dependent scattering plays a crucial role in the transport properties.

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AN - SCOPUS:0141991891

SN - 0577-9073

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JO - Chinese Journal of Physics

JF - Chinese Journal of Physics

IS - 4

ER -

Grain-Boundary Magnetoresistance of CrO₂ Films Grown on TiO ₂-Buffered LaAlO₃ Substrates

Abstract

ASJC Scopus subject areas

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