GMR effect of permalloy/Cu multilayers on Si(100) and Si(111)

C. H. Ho; C. K. Lo; Y. D. Yao; S. F. Lee; I. Klik; M. T. Lin; Y. Liou; D. Y. Chiang; D. R. Huang

GMR effect of permalloy/Cu multilayers on Si(100) and Si(111)

C. H. Ho^*, C. K. Lo, Y. D. Yao, S. F. Lee, I. Klik, M. T. Lin, Y. Liou, D. Y. Chiang, D. R. Huang

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

[Permalloy_1.5nm/Cu(t)]n multilayers with a 5 nm thick Fe buffer layer were sputtered on Si(100) and Si(111). Under the same preparation condition, the giant magnetoresistance (GMR) ratio of the multilayers on Si(100) is always larger than that on Si(111). The GMR ratio is very sensitive to the Ar gas pressure during sputtering. We found that 2 m Torr is the optimum discharge gas pressure. Electrical and magnetic properties of permalloy/Cu multilayers with a Cu layer thickness (t) near its second oscillatory peak were reported. We conclude that the GMR ratio of the [permalloy/Cu(t)]n multilayers was strongly dependent on the Cu layer thickness t, on the periodicity number n, and on the (100) crystalline orientation of the Si substrate.

Original language	English
Pages (from-to)	73-77
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	517
Publication status	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA Duration: 1998 Apr 13 → 1998 Apr 15

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{2c5840255a1f4e48aa6201d99fcd4d44,

title = "GMR effect of permalloy/Cu multilayers on Si(100) and Si(111)",

abstract = "[Permalloy1.5nm/Cu(t)]n multilayers with a 5 nm thick Fe buffer layer were sputtered on Si(100) and Si(111). Under the same preparation condition, the giant magnetoresistance (GMR) ratio of the multilayers on Si(100) is always larger than that on Si(111). The GMR ratio is very sensitive to the Ar gas pressure during sputtering. We found that 2 m Torr is the optimum discharge gas pressure. Electrical and magnetic properties of permalloy/Cu multilayers with a Cu layer thickness (t) near its second oscillatory peak were reported. We conclude that the GMR ratio of the [permalloy/Cu(t)]n multilayers was strongly dependent on the Cu layer thickness t, on the periodicity number n, and on the (100) crystalline orientation of the Si substrate.",

author = "Ho, {C. H.} and Lo, {C. K.} and Yao, {Y. D.} and Lee, {S. F.} and I. Klik and Lin, {M. T.} and Y. Liou and Chiang, {D. Y.} and Huang, {D. R.}",

year = "1998",

language = "English",

volume = "517",

pages = "73--77",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1998 MRS Spring Symposium ; Conference date: 13-04-1998 Through 15-04-1998",

}

TY - JOUR

T1 - GMR effect of permalloy/Cu multilayers on Si(100) and Si(111)

AU - Ho, C. H.

AU - Lo, C. K.

AU - Yao, Y. D.

AU - Lee, S. F.

AU - Klik, I.

AU - Lin, M. T.

AU - Liou, Y.

AU - Chiang, D. Y.

AU - Huang, D. R.

PY - 1998

Y1 - 1998

N2 - [Permalloy1.5nm/Cu(t)]n multilayers with a 5 nm thick Fe buffer layer were sputtered on Si(100) and Si(111). Under the same preparation condition, the giant magnetoresistance (GMR) ratio of the multilayers on Si(100) is always larger than that on Si(111). The GMR ratio is very sensitive to the Ar gas pressure during sputtering. We found that 2 m Torr is the optimum discharge gas pressure. Electrical and magnetic properties of permalloy/Cu multilayers with a Cu layer thickness (t) near its second oscillatory peak were reported. We conclude that the GMR ratio of the [permalloy/Cu(t)]n multilayers was strongly dependent on the Cu layer thickness t, on the periodicity number n, and on the (100) crystalline orientation of the Si substrate.

AB - [Permalloy1.5nm/Cu(t)]n multilayers with a 5 nm thick Fe buffer layer were sputtered on Si(100) and Si(111). Under the same preparation condition, the giant magnetoresistance (GMR) ratio of the multilayers on Si(100) is always larger than that on Si(111). The GMR ratio is very sensitive to the Ar gas pressure during sputtering. We found that 2 m Torr is the optimum discharge gas pressure. Electrical and magnetic properties of permalloy/Cu multilayers with a Cu layer thickness (t) near its second oscillatory peak were reported. We conclude that the GMR ratio of the [permalloy/Cu(t)]n multilayers was strongly dependent on the Cu layer thickness t, on the periodicity number n, and on the (100) crystalline orientation of the Si substrate.

UR - http://www.scopus.com/inward/record.url?scp=0032302796&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032302796&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032302796

SN - 0272-9172

VL - 517

SP - 73

EP - 77

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Spring Symposium

Y2 - 13 April 1998 through 15 April 1998

ER -

GMR effect of permalloy/Cu multilayers on Si(100) and Si(111)

Abstract

ASJC Scopus subject areas

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