GMR effect of permalloy/Cu multilayers on Si(100) and Si(111)

C. H. Ho, Chi-Kuen Lo, Y. D. Yao, S. F. Lee, I. Klik, M. T. Lin, Y. Liou, D. Y. Chiang, D. R. Huang

Research output: Contribution to journalConference article

Abstract

[Permalloy1.5nm/Cu(t)]n multilayers with a 5 nm thick Fe buffer layer were sputtered on Si(100) and Si(111). Under the same preparation condition, the giant magnetoresistance (GMR) ratio of the multilayers on Si(100) is always larger than that on Si(111). The GMR ratio is very sensitive to the Ar gas pressure during sputtering. We found that 2 m Torr is the optimum discharge gas pressure. Electrical and magnetic properties of permalloy/Cu multilayers with a Cu layer thickness (t) near its second oscillatory peak were reported. We conclude that the GMR ratio of the [permalloy/Cu(t)]n multilayers was strongly dependent on the Cu layer thickness t, on the periodicity number n, and on the (100) crystalline orientation of the Si substrate.

Original languageEnglish
Pages (from-to)73-77
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume517
Publication statusPublished - 1998 Dec 1
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1998 Apr 131998 Apr 15

Fingerprint

Giant magnetoresistance
Permalloys (trademark)
Multilayers
gas pressure
Gases
periodic variations
Buffer layers
buffers
sputtering
electrical properties
Crystal orientation
Discharge (fluid mechanics)
magnetic properties
Sputtering
Magnetic properties
preparation
Electric properties
Crystalline materials
Substrates

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Ho, C. H., Lo, C-K., Yao, Y. D., Lee, S. F., Klik, I., Lin, M. T., ... Huang, D. R. (1998). GMR effect of permalloy/Cu multilayers on Si(100) and Si(111). Materials Research Society Symposium - Proceedings, 517, 73-77.

GMR effect of permalloy/Cu multilayers on Si(100) and Si(111). / Ho, C. H.; Lo, Chi-Kuen; Yao, Y. D.; Lee, S. F.; Klik, I.; Lin, M. T.; Liou, Y.; Chiang, D. Y.; Huang, D. R.

In: Materials Research Society Symposium - Proceedings, Vol. 517, 01.12.1998, p. 73-77.

Research output: Contribution to journalConference article

Ho, CH, Lo, C-K, Yao, YD, Lee, SF, Klik, I, Lin, MT, Liou, Y, Chiang, DY & Huang, DR 1998, 'GMR effect of permalloy/Cu multilayers on Si(100) and Si(111)', Materials Research Society Symposium - Proceedings, vol. 517, pp. 73-77.
Ho, C. H. ; Lo, Chi-Kuen ; Yao, Y. D. ; Lee, S. F. ; Klik, I. ; Lin, M. T. ; Liou, Y. ; Chiang, D. Y. ; Huang, D. R. / GMR effect of permalloy/Cu multilayers on Si(100) and Si(111). In: Materials Research Society Symposium - Proceedings. 1998 ; Vol. 517. pp. 73-77.
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T1 - GMR effect of permalloy/Cu multilayers on Si(100) and Si(111)

AU - Ho, C. H.

AU - Lo, Chi-Kuen

AU - Yao, Y. D.

AU - Lee, S. F.

AU - Klik, I.

AU - Lin, M. T.

AU - Liou, Y.

AU - Chiang, D. Y.

AU - Huang, D. R.

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N2 - [Permalloy1.5nm/Cu(t)]n multilayers with a 5 nm thick Fe buffer layer were sputtered on Si(100) and Si(111). Under the same preparation condition, the giant magnetoresistance (GMR) ratio of the multilayers on Si(100) is always larger than that on Si(111). The GMR ratio is very sensitive to the Ar gas pressure during sputtering. We found that 2 m Torr is the optimum discharge gas pressure. Electrical and magnetic properties of permalloy/Cu multilayers with a Cu layer thickness (t) near its second oscillatory peak were reported. We conclude that the GMR ratio of the [permalloy/Cu(t)]n multilayers was strongly dependent on the Cu layer thickness t, on the periodicity number n, and on the (100) crystalline orientation of the Si substrate.

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