GMR effect of Cu/Co multilayer on Si(1 0 0)

S. C. Ma; C. K. Lo; Y. D. Yao; D. Y. Chiang; T. F. Ying; D. R. Huang

doi:10.1016/S0304-8853(99)00666-6

GMR effect of Cu/Co multilayer on Si(1 0 0)

S. C. Ma^*, C. K. Lo, Y. D. Yao, D. Y. Chiang, T. F. Ying, D. R. Huang

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

(Cu/Co)₁₀ was deposited on SiO₂/Si(1 0 0) and Si(1 0 0) respectively, by e-beam evaporation. For the multilayer on Si(1 0 0), the MR was about 9.1% at 10 K and it reduced to 4% at room temperature, while for the sample on SiO₂/Si(1 0 0), the MR at 10 and 300 K were 19%, and 7.2%, respectively. The MR extracted from minor R-H loop was higher than that in major R-H loop. This could be due to the increment of domain wall which enhances the electrons scattering.

Original language	English
Pages (from-to)	131-134
Number of pages	4
Journal	Journal of Magnetism and Magnetic Materials
Volume	209
Issue number	1-3
DOIs	https://doi.org/10.1016/S0304-8853(99)00666-6
Publication status	Published - 2000 Feb
Externally published	Yes
Event	Proceedings of the 1999 International Symposium on Advanced Magnetic Technologies (ISAMT'99) - Taipei, Taiwan Duration: 1999 May 24 → 1999 May 25

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/S0304-8853(99)00666-6

Cite this

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title = "GMR effect of Cu/Co multilayer on Si(1 0 0)",

abstract = "(Cu/Co)10 was deposited on SiO2/Si(1 0 0) and Si(1 0 0) respectively, by e-beam evaporation. For the multilayer on Si(1 0 0), the MR was about 9.1% at 10 K and it reduced to 4% at room temperature, while for the sample on SiO2/Si(1 0 0), the MR at 10 and 300 K were 19%, and 7.2%, respectively. The MR extracted from minor R-H loop was higher than that in major R-H loop. This could be due to the increment of domain wall which enhances the electrons scattering.",

author = "Ma, {S. C.} and Lo, {C. K.} and Yao, {Y. D.} and Chiang, {D. Y.} and Ying, {T. F.} and Huang, {D. R.}",

year = "2000",

month = feb,

doi = "10.1016/S0304-8853(99)00666-6",

language = "English",

volume = "209",

pages = "131--134",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

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number = "1-3",

note = "Proceedings of the 1999 International Symposium on Advanced Magnetic Technologies (ISAMT'99) ; Conference date: 24-05-1999 Through 25-05-1999",

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TY - JOUR

T1 - GMR effect of Cu/Co multilayer on Si(1 0 0)

AU - Ma, S. C.

AU - Lo, C. K.

AU - Yao, Y. D.

AU - Chiang, D. Y.

AU - Ying, T. F.

AU - Huang, D. R.

PY - 2000/2

Y1 - 2000/2

N2 - (Cu/Co)10 was deposited on SiO2/Si(1 0 0) and Si(1 0 0) respectively, by e-beam evaporation. For the multilayer on Si(1 0 0), the MR was about 9.1% at 10 K and it reduced to 4% at room temperature, while for the sample on SiO2/Si(1 0 0), the MR at 10 and 300 K were 19%, and 7.2%, respectively. The MR extracted from minor R-H loop was higher than that in major R-H loop. This could be due to the increment of domain wall which enhances the electrons scattering.

AB - (Cu/Co)10 was deposited on SiO2/Si(1 0 0) and Si(1 0 0) respectively, by e-beam evaporation. For the multilayer on Si(1 0 0), the MR was about 9.1% at 10 K and it reduced to 4% at room temperature, while for the sample on SiO2/Si(1 0 0), the MR at 10 and 300 K were 19%, and 7.2%, respectively. The MR extracted from minor R-H loop was higher than that in major R-H loop. This could be due to the increment of domain wall which enhances the electrons scattering.

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U2 - 10.1016/S0304-8853(99)00666-6

DO - 10.1016/S0304-8853(99)00666-6

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AN - SCOPUS:0034135468

SN - 0304-8853

VL - 209

SP - 131

EP - 134

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 1-3

T2 - Proceedings of the 1999 International Symposium on Advanced Magnetic Technologies (ISAMT'99)

Y2 - 24 May 1999 through 25 May 1999

ER -

GMR effect of Cu/Co multilayer on Si(1 0 0)

Abstract

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