GMR effect of Cu/Co multilayer on Si(1 0 0)

S. C. Ma, C. K. Lo, Y. D. Yao, D. Y. Chiang, T. F. Ying, D. R. Huang

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

(Cu/Co)10 was deposited on SiO2/Si(1 0 0) and Si(1 0 0) respectively, by e-beam evaporation. For the multilayer on Si(1 0 0), the MR was about 9.1% at 10 K and it reduced to 4% at room temperature, while for the sample on SiO2/Si(1 0 0), the MR at 10 and 300 K were 19%, and 7.2%, respectively. The MR extracted from minor R-H loop was higher than that in major R-H loop. This could be due to the increment of domain wall which enhances the electrons scattering.

Original languageEnglish
Pages (from-to)131-134
Number of pages4
JournalJournal of Magnetism and Magnetic Materials
Volume209
Issue number1-3
DOIs
Publication statusPublished - 2000 Feb
EventProceedings of the 1999 International Symposium on Advanced Magnetic Technologies (ISAMT'99) - Taipei, Taiwan
Duration: 1999 May 241999 May 25

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Ma, S. C., Lo, C. K., Yao, Y. D., Chiang, D. Y., Ying, T. F., & Huang, D. R. (2000). GMR effect of Cu/Co multilayer on Si(1 0 0). Journal of Magnetism and Magnetic Materials, 209(1-3), 131-134. https://doi.org/10.1016/S0304-8853(99)00666-6