GMR effect of Cu/Co multilayer on Si(1 0 0)

S. C. Ma, Chi-Kuen Lo, Y. D. Yao, D. Y. Chiang, T. F. Ying, D. R. Huang

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

(Cu/Co)10 was deposited on SiO2/Si(1 0 0) and Si(1 0 0) respectively, by e-beam evaporation. For the multilayer on Si(1 0 0), the MR was about 9.1% at 10 K and it reduced to 4% at room temperature, while for the sample on SiO2/Si(1 0 0), the MR at 10 and 300 K were 19%, and 7.2%, respectively. The MR extracted from minor R-H loop was higher than that in major R-H loop. This could be due to the increment of domain wall which enhances the electrons scattering.

Original languageEnglish
Pages (from-to)131-134
Number of pages4
JournalJournal of Magnetism and Magnetic Materials
Volume209
Issue number1-3
DOIs
Publication statusPublished - 2000 Jan 1
EventProceedings of the 1999 International Symposium on Advanced Magnetic Technologies (ISAMT'99) - Taipei, Taiwan
Duration: 1999 May 241999 May 25

Fingerprint

Electron scattering
Domain walls
Multilayers
Evaporation
domain wall
electron scattering
evaporation
Temperature
room temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Ma, S. C., Lo, C-K., Yao, Y. D., Chiang, D. Y., Ying, T. F., & Huang, D. R. (2000). GMR effect of Cu/Co multilayer on Si(1 0 0). Journal of Magnetism and Magnetic Materials, 209(1-3), 131-134. https://doi.org/10.1016/S0304-8853(99)00666-6

GMR effect of Cu/Co multilayer on Si(1 0 0). / Ma, S. C.; Lo, Chi-Kuen; Yao, Y. D.; Chiang, D. Y.; Ying, T. F.; Huang, D. R.

In: Journal of Magnetism and Magnetic Materials, Vol. 209, No. 1-3, 01.01.2000, p. 131-134.

Research output: Contribution to journalConference article

Ma, SC, Lo, C-K, Yao, YD, Chiang, DY, Ying, TF & Huang, DR 2000, 'GMR effect of Cu/Co multilayer on Si(1 0 0)', Journal of Magnetism and Magnetic Materials, vol. 209, no. 1-3, pp. 131-134. https://doi.org/10.1016/S0304-8853(99)00666-6
Ma, S. C. ; Lo, Chi-Kuen ; Yao, Y. D. ; Chiang, D. Y. ; Ying, T. F. ; Huang, D. R. / GMR effect of Cu/Co multilayer on Si(1 0 0). In: Journal of Magnetism and Magnetic Materials. 2000 ; Vol. 209, No. 1-3. pp. 131-134.
@article{cdb380cb33304d74804b8c8eb35e3bc8,
title = "GMR effect of Cu/Co multilayer on Si(1 0 0)",
abstract = "(Cu/Co)10 was deposited on SiO2/Si(1 0 0) and Si(1 0 0) respectively, by e-beam evaporation. For the multilayer on Si(1 0 0), the MR was about 9.1{\%} at 10 K and it reduced to 4{\%} at room temperature, while for the sample on SiO2/Si(1 0 0), the MR at 10 and 300 K were 19{\%}, and 7.2{\%}, respectively. The MR extracted from minor R-H loop was higher than that in major R-H loop. This could be due to the increment of domain wall which enhances the electrons scattering.",
author = "Ma, {S. C.} and Chi-Kuen Lo and Yao, {Y. D.} and Chiang, {D. Y.} and Ying, {T. F.} and Huang, {D. R.}",
year = "2000",
month = "1",
day = "1",
doi = "10.1016/S0304-8853(99)00666-6",
language = "English",
volume = "209",
pages = "131--134",
journal = "Journal of Magnetism and Magnetic Materials",
issn = "0304-8853",
publisher = "Elsevier",
number = "1-3",

}

TY - JOUR

T1 - GMR effect of Cu/Co multilayer on Si(1 0 0)

AU - Ma, S. C.

AU - Lo, Chi-Kuen

AU - Yao, Y. D.

AU - Chiang, D. Y.

AU - Ying, T. F.

AU - Huang, D. R.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - (Cu/Co)10 was deposited on SiO2/Si(1 0 0) and Si(1 0 0) respectively, by e-beam evaporation. For the multilayer on Si(1 0 0), the MR was about 9.1% at 10 K and it reduced to 4% at room temperature, while for the sample on SiO2/Si(1 0 0), the MR at 10 and 300 K were 19%, and 7.2%, respectively. The MR extracted from minor R-H loop was higher than that in major R-H loop. This could be due to the increment of domain wall which enhances the electrons scattering.

AB - (Cu/Co)10 was deposited on SiO2/Si(1 0 0) and Si(1 0 0) respectively, by e-beam evaporation. For the multilayer on Si(1 0 0), the MR was about 9.1% at 10 K and it reduced to 4% at room temperature, while for the sample on SiO2/Si(1 0 0), the MR at 10 and 300 K were 19%, and 7.2%, respectively. The MR extracted from minor R-H loop was higher than that in major R-H loop. This could be due to the increment of domain wall which enhances the electrons scattering.

UR - http://www.scopus.com/inward/record.url?scp=0034135468&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034135468&partnerID=8YFLogxK

U2 - 10.1016/S0304-8853(99)00666-6

DO - 10.1016/S0304-8853(99)00666-6

M3 - Conference article

AN - SCOPUS:0034135468

VL - 209

SP - 131

EP - 134

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

IS - 1-3

ER -