Giant magnetocurrent in silicon-base magnetic tunneling transistor

Y. W. Huang, C. K. Lo*, Y. D. Yao, L. C. Hsieh, J. J. Ju, D. R. Huang, J. H. Huang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)


A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p-n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base current caused by external magnetic field is from 1.9 to 123nA. The working principle of this silicon-base MTT can be described by a circuit theory.

Original languageEnglish
Pages (from-to)279-282
Number of pages4
JournalJournal of Magnetism and Magnetic Materials
Issue number1-3
Publication statusPublished - 2004 Nov
Externally publishedYes
EventInternational Symposium on Advanced Magnetic Technologies - Taipei, Taiwan
Duration: 2003 Nov 132003 Nov 16


  • Magnetic tunneling junction
  • Magnetocurrent
  • Spin transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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