Giant magnetocurrent in silicon-base magnetic tunneling transistor

Y. W. Huang; C. K. Lo; Y. D. Yao; L. C. Hsieh; J. J. Ju; D. R. Huang; J. H. Huang

doi:10.1016/j.jmmm.2004.04.065

Giant magnetocurrent in silicon-base magnetic tunneling transistor

Y. W. Huang, C. K. Lo^*, Y. D. Yao, L. C. Hsieh, J. J. Ju, D. R. Huang, J. H. Huang

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p-n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base current caused by external magnetic field is from 1.9 to 123nA. The working principle of this silicon-base MTT can be described by a circuit theory.

Original language	English
Pages (from-to)	279-282
Number of pages	4
Journal	Journal of Magnetism and Magnetic Materials
Volume	282
Issue number	1-3
DOIs	https://doi.org/10.1016/j.jmmm.2004.04.065
Publication status	Published - 2004 Nov
Externally published	Yes
Event	International Symposium on Advanced Magnetic Technologies - Taipei, Taiwan Duration: 2003 Nov 13 → 2003 Nov 16

Keywords

Magnetic tunneling junction
Magnetocurrent
Spin transistor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1016/j.jmmm.2004.04.065

Cite this

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title = "Giant magnetocurrent in silicon-base magnetic tunneling transistor",

abstract = "A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p-n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base current caused by external magnetic field is from 1.9 to 123nA. The working principle of this silicon-base MTT can be described by a circuit theory.",

keywords = "Magnetic tunneling junction, Magnetocurrent, Spin transistor",

author = "Huang, {Y. W.} and Lo, {C. K.} and Yao, {Y. D.} and Hsieh, {L. C.} and Ju, {J. J.} and Huang, {D. R.} and Huang, {J. H.}",

note = "Funding Information: We are grateful for the financial support from MOEA and NSC under grant Nos. of A331XS3710 and NSC92-2120-M-001-008. Besides, we thank Mr. W.H. Chou, Dr. J.H. Tsai and Dr. P.P. Tsai of the Nano-technology Research Center of ITRI for their technical help.; International Symposium on Advanced Magnetic Technologies ; Conference date: 13-11-2003 Through 16-11-2003",

year = "2004",

month = nov,

doi = "10.1016/j.jmmm.2004.04.065",

language = "English",

volume = "282",

pages = "279--282",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "1-3",

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TY - JOUR

T1 - Giant magnetocurrent in silicon-base magnetic tunneling transistor

AU - Huang, Y. W.

AU - Lo, C. K.

AU - Yao, Y. D.

AU - Hsieh, L. C.

AU - Ju, J. J.

AU - Huang, D. R.

AU - Huang, J. H.

N1 - Funding Information: We are grateful for the financial support from MOEA and NSC under grant Nos. of A331XS3710 and NSC92-2120-M-001-008. Besides, we thank Mr. W.H. Chou, Dr. J.H. Tsai and Dr. P.P. Tsai of the Nano-technology Research Center of ITRI for their technical help.

PY - 2004/11

Y1 - 2004/11

N2 - A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p-n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base current caused by external magnetic field is from 1.9 to 123nA. The working principle of this silicon-base MTT can be described by a circuit theory.

AB - A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p-n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base current caused by external magnetic field is from 1.9 to 123nA. The working principle of this silicon-base MTT can be described by a circuit theory.

KW - Magnetic tunneling junction

KW - Magnetocurrent

KW - Spin transistor

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UR - http://www.scopus.com/inward/citedby.url?scp=5744239099&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2004.04.065

DO - 10.1016/j.jmmm.2004.04.065

M3 - Conference article

AN - SCOPUS:5744239099

SN - 0304-8853

VL - 282

SP - 279

EP - 282

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 1-3

T2 - International Symposium on Advanced Magnetic Technologies

Y2 - 13 November 2003 through 16 November 2003

ER -

Giant magnetocurrent in silicon-base magnetic tunneling transistor

Abstract

Keywords

ASJC Scopus subject areas

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