Gettering Effect Induced by Oxygen-Deficient Titanium Oxide in InZnO and InGaZnO Channel Systems for Low-Power Display Applications

Shiang Shiou Yen; Yu Chien Chiu; Chun Hu Cheng; Po Chun Chen; Yu Chen Yeh; Chien Hung Tung; Hsiao Hsuan Hsu; Chun Yen Chang

doi:10.1109/JDT.2015.2457425

Gettering Effect Induced by Oxygen-Deficient Titanium Oxide in InZnO and InGaZnO Channel Systems for Low-Power Display Applications

Shiang Shiou Yen, Yu Chien Chiu, Chun Hu Cheng, Po Chun Chen, Yu Chen Yeh, Chien Hung Tung, Hsiao Hsuan Hsu, Chun Yen Chang

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

This paper reported the IGZO and IZO thin-film transistor (TFT) with titanium-oxide semiconductor as channel capping layer. After the TiO Gettering process, the oxygen vacancies in IGZO channel were successfully modified to maximize the carrier concentration and device mobility. The superior transfer characteristics included a low sub-threshold swing of 79 mV/decade, a very high mobility of 68 cm² V·s, and good on/off-current ratio of 5.61×10⁶. However, the IZO channel with nano-crystallized grains and without Ga atom doping showed unfavorable transistor characteristics. In addition to apparently degraded transfer properties, the spontaneously oxidized TiO_x capping layer also lead to an increase of channel parasitic resistance that limits the output driving current. Therefore, we believe that the existence of Ga-O bonds among IGZO channel would be helpful to stabilize oxygen diffusion behavior and electric structure during Gettering process.

Original language	English
Article number	7169495
Pages (from-to)	219-223
Number of pages	5
Journal	Journal of Display Technology
Volume	12
Issue number	3
DOIs	https://doi.org/10.1109/JDT.2015.2457425
Publication status	Published - 2016 Mar

Keywords

Amorphous oxide semiconductor (AOS)
Gettering effect
indium-gallium-zinc oxide (IGZO)
indium-zinc oxide (IZO)
thin-film transistor (TFT)
titanium oxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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@article{8332930313b642ba92b7c01fbf13800a,

title = "Gettering Effect Induced by Oxygen-Deficient Titanium Oxide in InZnO and InGaZnO Channel Systems for Low-Power Display Applications",

abstract = "This paper reported the IGZO and IZO thin-film transistor (TFT) with titanium-oxide semiconductor as channel capping layer. After the TiO Gettering process, the oxygen vacancies in IGZO channel were successfully modified to maximize the carrier concentration and device mobility. The superior transfer characteristics included a low sub-threshold swing of 79 mV/decade, a very high mobility of 68 cm2 V·s, and good on/off-current ratio of 5.61×106. However, the IZO channel with nano-crystallized grains and without Ga atom doping showed unfavorable transistor characteristics. In addition to apparently degraded transfer properties, the spontaneously oxidized TiOx capping layer also lead to an increase of channel parasitic resistance that limits the output driving current. Therefore, we believe that the existence of Ga-O bonds among IGZO channel would be helpful to stabilize oxygen diffusion behavior and electric structure during Gettering process.",

keywords = "Amorphous oxide semiconductor (AOS), Gettering effect, indium-gallium-zinc oxide (IGZO), indium-zinc oxide (IZO), thin-film transistor (TFT), titanium oxide",

author = "Yen, {Shiang Shiou} and Chiu, {Yu Chien} and Cheng, {Chun Hu} and Chen, {Po Chun} and Yeh, {Yu Chen} and Tung, {Chien Hung} and Hsu, {Hsiao Hsuan} and Chang, {Chun Yen}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2016",

month = mar,

doi = "10.1109/JDT.2015.2457425",

language = "English",

volume = "12",

pages = "219--223",

journal = "Journal of Display Technology",

issn = "1551-319X",

publisher = "IEEE Computer Society",

number = "3",

}

TY - JOUR

T1 - Gettering Effect Induced by Oxygen-Deficient Titanium Oxide in InZnO and InGaZnO Channel Systems for Low-Power Display Applications

AU - Yen, Shiang Shiou

AU - Chiu, Yu Chien

AU - Cheng, Chun Hu

AU - Chen, Po Chun

AU - Yeh, Yu Chen

AU - Tung, Chien Hung

AU - Hsu, Hsiao Hsuan

AU - Chang, Chun Yen

PY - 2016/3

Y1 - 2016/3

N2 - This paper reported the IGZO and IZO thin-film transistor (TFT) with titanium-oxide semiconductor as channel capping layer. After the TiO Gettering process, the oxygen vacancies in IGZO channel were successfully modified to maximize the carrier concentration and device mobility. The superior transfer characteristics included a low sub-threshold swing of 79 mV/decade, a very high mobility of 68 cm2 V·s, and good on/off-current ratio of 5.61×106. However, the IZO channel with nano-crystallized grains and without Ga atom doping showed unfavorable transistor characteristics. In addition to apparently degraded transfer properties, the spontaneously oxidized TiOx capping layer also lead to an increase of channel parasitic resistance that limits the output driving current. Therefore, we believe that the existence of Ga-O bonds among IGZO channel would be helpful to stabilize oxygen diffusion behavior and electric structure during Gettering process.

AB - This paper reported the IGZO and IZO thin-film transistor (TFT) with titanium-oxide semiconductor as channel capping layer. After the TiO Gettering process, the oxygen vacancies in IGZO channel were successfully modified to maximize the carrier concentration and device mobility. The superior transfer characteristics included a low sub-threshold swing of 79 mV/decade, a very high mobility of 68 cm2 V·s, and good on/off-current ratio of 5.61×106. However, the IZO channel with nano-crystallized grains and without Ga atom doping showed unfavorable transistor characteristics. In addition to apparently degraded transfer properties, the spontaneously oxidized TiOx capping layer also lead to an increase of channel parasitic resistance that limits the output driving current. Therefore, we believe that the existence of Ga-O bonds among IGZO channel would be helpful to stabilize oxygen diffusion behavior and electric structure during Gettering process.

KW - Amorphous oxide semiconductor (AOS)

KW - Gettering effect

KW - indium-gallium-zinc oxide (IGZO)

KW - indium-zinc oxide (IZO)

KW - thin-film transistor (TFT)

KW - titanium oxide

UR - http://www.scopus.com/inward/record.url?scp=84962920687&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84962920687&partnerID=8YFLogxK

U2 - 10.1109/JDT.2015.2457425

DO - 10.1109/JDT.2015.2457425

M3 - Article

AN - SCOPUS:84962920687

SN - 1551-319X

VL - 12

SP - 219

EP - 223

JO - Journal of Display Technology

JF - Journal of Display Technology

IS - 3

M1 - 7169495

ER -

Gettering Effect Induced by Oxygen-Deficient Titanium Oxide in InZnO and InGaZnO Channel Systems for Low-Power Display Applications

Abstract

Keywords

ASJC Scopus subject areas

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