GeO2/PZT resistive random access memory devices with Ni electrode

Kun I. Chou; Chun Hu Cheng; Albert Chin

doi:10.1109/EDSSC.2013.6628194

GeO₂/PZT resistive random access memory devices with Ni electrode

Kun I. Chou, Chun Hu Cheng, Albert Chin

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report a resistive random-access memory (RRAM) using stacked GeO ₂ and PZT. Under unipolar mode operation, the Ni/GeO ₂/PZT/TaN RRAM shows a good DC cycling of 2×10³ cycles, 85 °C retention, and large resistance window about 120x, which is better than that shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeO₂.

Original language	English
Title of host publication	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs	https://doi.org/10.1109/EDSSC.2013.6628194
Publication status	Published - 2013
Event	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, Hong Kong Duration: 2013 Jun 3 → 2013 Jun 5

Publication series

Name	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

Other

Other	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
Country/Territory	Hong Kong
City	Hong Kong
Period	2013/06/03 → 2013/06/05

Keywords

GeO
PZT
RRAM
TiO

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EDSSC.2013.6628194

Cite this

GeO₂/PZT resistive random access memory devices with Ni electrode. / Chou, Kun I.; Cheng, Chun Hu; Chin, Albert.
2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013. 6628194 (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chou, KI, Cheng, CH & Chin, A 2013, GeO₂/PZT resistive random access memory devices with Ni electrode. in 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013., 6628194, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, Hong Kong, Hong Kong, 2013/06/03. https://doi.org/10.1109/EDSSC.2013.6628194

@inproceedings{80333c79b5a149cbb396ac3816e58482,

title = "GeO2/PZT resistive random access memory devices with Ni electrode",

abstract = "We report a resistive random-access memory (RRAM) using stacked GeO 2 and PZT. Under unipolar mode operation, the Ni/GeO 2/PZT/TaN RRAM shows a good DC cycling of 2×103 cycles, 85 °C retention, and large resistance window about 120x, which is better than that shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeO2.",

keywords = "GeO, PZT, RRAM, TiO",

author = "Chou, {Kun I.} and Cheng, {Chun Hu} and Albert Chin",

year = "2013",

doi = "10.1109/EDSSC.2013.6628194",

language = "English",

isbn = "9781467325233",

series = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013",

booktitle = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013",

note = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 ; Conference date: 03-06-2013 Through 05-06-2013",

}

TY - GEN

T1 - GeO2/PZT resistive random access memory devices with Ni electrode

AU - Chou, Kun I.

AU - Cheng, Chun Hu

AU - Chin, Albert

PY - 2013

Y1 - 2013

N2 - We report a resistive random-access memory (RRAM) using stacked GeO 2 and PZT. Under unipolar mode operation, the Ni/GeO 2/PZT/TaN RRAM shows a good DC cycling of 2×103 cycles, 85 °C retention, and large resistance window about 120x, which is better than that shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeO2.

AB - We report a resistive random-access memory (RRAM) using stacked GeO 2 and PZT. Under unipolar mode operation, the Ni/GeO 2/PZT/TaN RRAM shows a good DC cycling of 2×103 cycles, 85 °C retention, and large resistance window about 120x, which is better than that shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeO2.

KW - GeO

KW - PZT

KW - RRAM

KW - TiO

UR - http://www.scopus.com/inward/record.url?scp=84890538349&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84890538349&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2013.6628194

DO - 10.1109/EDSSC.2013.6628194

M3 - Conference contribution

AN - SCOPUS:84890538349

SN - 9781467325233

T3 - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

BT - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

T2 - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

Y2 - 3 June 2013 through 5 June 2013

ER -