GeO2/PZT resistive random access memory devices with Ni electrode

Kun I. Chou, Chun Hu Cheng, Albert Chin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report a resistive random-access memory (RRAM) using stacked GeO 2 and PZT. Under unipolar mode operation, the Ni/GeO 2/PZT/TaN RRAM shows a good DC cycling of 2×103 cycles, 85 °C retention, and large resistance window about 120x, which is better than that shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeO2.

Original languageEnglish
Title of host publication2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs
Publication statusPublished - 2013 Dec 23
Event2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, Hong Kong
Duration: 2013 Jun 32013 Jun 5

Publication series

Name2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

Other

Other2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
CountryHong Kong
CityHong Kong
Period13/6/313/6/5

    Fingerprint

Keywords

  • GeO
  • PZT
  • RRAM
  • TiO

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Chou, K. I., Cheng, C. H., & Chin, A. (2013). GeO2/PZT resistive random access memory devices with Ni electrode. In 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 [6628194] (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013). https://doi.org/10.1109/EDSSC.2013.6628194