Geometric variation: A novel approach to examine the surface roughness and the line roughness effects in trigate FinFETs

E. R. Hsieh; Y. C. Fan; C. H. Liu; Steve S. Chung; R. M. Huang; C. T. Tsai; T. R. Yew

doi:10.1109/EDTM.2017.7947549

Geometric variation: A novel approach to examine the surface roughness and the line roughness effects in trigate FinFETs

E. R. Hsieh, Y. C. Fan, C. H. Liu, Steve S. Chung, R. M. Huang, C. T. Tsai, T. R. Yew

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A new theory has been developed for geometric variation of trigate FinFETs. This geometric variation includes both line roughness induced variation and oxide-thickness variation, which can be measured from gate capacitance and Ig current variations, respectively. Experimental results show that trigate devices are subject to serious line variations as the fin height scales up and the fin-width scales down, leading to large I_on current variation, i.e., as we increase the fin aspect-ratio, line variation becomes worse which shows an increase of the active power consumption. On the other hand, oxide-thickness variation reveals significant impacts on the off-state leakage, i.e., a rough gate oxide yields to larger static power. These valuable results provide us important guideline for the design and manufacturing of high quality 3D gate FinFETs.

Original language	English
Title of host publication	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	130-131
Number of pages	2
ISBN (Electronic)	9781509046591
DOIs	https://doi.org/10.1109/EDTM.2017.7947549
Publication status	Published - 2017 Jun 13
Event	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan Duration: 2017 Feb 28 → 2017 Mar 2

Publication series

Name	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

Other

Other	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
Country/Territory	Japan
City	Toyama
Period	2017/02/28 → 2017/03/02

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EDTM.2017.7947549

Cite this

Hsieh, E. R., Fan, Y. C., Liu, C. H., Chung, S. S., Huang, R. M., Tsai, C. T., & Yew, T. R. (2017). Geometric variation: A novel approach to examine the surface roughness and the line roughness effects in trigate FinFETs. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings (pp. 130-131). Article 7947549 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2017.7947549

Geometric variation: A novel approach to examine the surface roughness and the line roughness effects in trigate FinFETs. / Hsieh, E. R.; Fan, Y. C.; Liu, C. H. et al.
2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 130-131 7947549 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hsieh, ER, Fan, YC, Liu, CH, Chung, SS, Huang, RM, Tsai, CT & Yew, TR 2017, Geometric variation: A novel approach to examine the surface roughness and the line roughness effects in trigate FinFETs. in 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings., 7947549, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 130-131, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017, Toyama, Japan, 2017/02/28. https://doi.org/10.1109/EDTM.2017.7947549

Hsieh ER, Fan YC, Liu CH, Chung SS, Huang RM, Tsai CT et al. Geometric variation: A novel approach to examine the surface roughness and the line roughness effects in trigate FinFETs. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. p. 130-131. 7947549. (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). doi: 10.1109/EDTM.2017.7947549

Hsieh, E. R. ; Fan, Y. C. ; Liu, C. H. et al. / Geometric variation : A novel approach to examine the surface roughness and the line roughness effects in trigate FinFETs. 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 130-131 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

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title = "Geometric variation: A novel approach to examine the surface roughness and the line roughness effects in trigate FinFETs",

abstract = "A new theory has been developed for geometric variation of trigate FinFETs. This geometric variation includes both line roughness induced variation and oxide-thickness variation, which can be measured from gate capacitance and Ig current variations, respectively. Experimental results show that trigate devices are subject to serious line variations as the fin height scales up and the fin-width scales down, leading to large Ion current variation, i.e., as we increase the fin aspect-ratio, line variation becomes worse which shows an increase of the active power consumption. On the other hand, oxide-thickness variation reveals significant impacts on the off-state leakage, i.e., a rough gate oxide yields to larger static power. These valuable results provide us important guideline for the design and manufacturing of high quality 3D gate FinFETs.",

author = "Hsieh, {E. R.} and Fan, {Y. C.} and Liu, {C. H.} and Chung, {Steve S.} and Huang, {R. M.} and Tsai, {C. T.} and Yew, {T. R.}",

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AB - A new theory has been developed for geometric variation of trigate FinFETs. This geometric variation includes both line roughness induced variation and oxide-thickness variation, which can be measured from gate capacitance and Ig current variations, respectively. Experimental results show that trigate devices are subject to serious line variations as the fin height scales up and the fin-width scales down, leading to large Ion current variation, i.e., as we increase the fin aspect-ratio, line variation becomes worse which shows an increase of the active power consumption. On the other hand, oxide-thickness variation reveals significant impacts on the off-state leakage, i.e., a rough gate oxide yields to larger static power. These valuable results provide us important guideline for the design and manufacturing of high quality 3D gate FinFETs.

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Geometric variation: A novel approach to examine the surface roughness and the line roughness effects in trigate FinFETs

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