Geometric variation: A novel approach to examine the surface roughness and the line roughness effects in trigate FinFETs

E. R. Hsieh, Y. C. Fan, C. H. Liu, Steve S. Chung, R. M. Huang, C. T. Tsai, T. R. Yew

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new theory has been developed for geometric variation of trigate FinFETs. This geometric variation includes both line roughness induced variation and oxide-thickness variation, which can be measured from gate capacitance and Ig current variations, respectively. Experimental results show that trigate devices are subject to serious line variations as the fin height scales up and the fin-width scales down, leading to large Ion current variation, i.e., as we increase the fin aspect-ratio, line variation becomes worse which shows an increase of the active power consumption. On the other hand, oxide-thickness variation reveals significant impacts on the off-state leakage, i.e., a rough gate oxide yields to larger static power. These valuable results provide us important guideline for the design and manufacturing of high quality 3D gate FinFETs.

Original languageEnglish
Title of host publication2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages130-131
Number of pages2
ISBN (Electronic)9781509046591
DOIs
Publication statusPublished - 2017 Jun 13
Event2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan
Duration: 2017 Feb 282017 Mar 2

Publication series

Name2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

Other

Other2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
CountryJapan
CityToyama
Period17/2/2817/3/2

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Hsieh, E. R., Fan, Y. C., Liu, C. H., Chung, S. S., Huang, R. M., Tsai, C. T., & Yew, T. R. (2017). Geometric variation: A novel approach to examine the surface roughness and the line roughness effects in trigate FinFETs. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings (pp. 130-131). [7947549] (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2017.7947549