Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs

W. C. Hua, Min-Hung Lee, P. S. Chen, S. Maikap, C. W. Liu, K. M. Chen

Research output: Contribution to journalArticle

58 Citations (Scopus)

Abstract

The flicker noise characteristics of strained-Si nMOSFETs are significantly dependent on the gate oxide formation. At high temperature (900 °C) thermal oxidation, the Si interstitials at the Si/oxide interface were injected into the underneath Si-SiGe heterojunction, and enhanced the Ge outdiffusion into the Si/oxide interface. The Ge atoms at Si/oxide interface act as trap centers, and the strained-Si nMOSFET with thermal gate oxide yields a much larger flicker noise than the control Si device. The Ge outdiffusion is suppressed for the device with the low temperature (700 °C) tetraethylorthosilicate gate oxide. The capacitance-voltage measurements of the strained-Si devices with thermal oxide also show that the Si/oxide interface trap density increases and the Si-SiGe heterojunction is smeared out due to the Ge outdiffusion.

Original languageEnglish
Pages (from-to)693-695
Number of pages3
JournalIEEE Electron Device Letters
Volume25
Issue number10
DOIs
Publication statusPublished - 2004 Oct 1

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Oxides
Heterojunctions
Capacitance measurement
Voltage measurement
Atoms
Oxidation
Temperature
Hot Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs. / Hua, W. C.; Lee, Min-Hung; Chen, P. S.; Maikap, S.; Liu, C. W.; Chen, K. M.

In: IEEE Electron Device Letters, Vol. 25, No. 10, 01.10.2004, p. 693-695.

Research output: Contribution to journalArticle

Hua, W. C. ; Lee, Min-Hung ; Chen, P. S. ; Maikap, S. ; Liu, C. W. ; Chen, K. M. / Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs. In: IEEE Electron Device Letters. 2004 ; Vol. 25, No. 10. pp. 693-695.
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