Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs

W. C. Hua, M. H. Lee, P. S. Chen, S. Maikap, C. W. Liu, K. M. Chen

    Research output: Contribution to journalArticlepeer-review

    58 Citations (Scopus)

    Abstract

    The flicker noise characteristics of strained-Si nMOSFETs are significantly dependent on the gate oxide formation. At high temperature (900 °C) thermal oxidation, the Si interstitials at the Si/oxide interface were injected into the underneath Si-SiGe heterojunction, and enhanced the Ge outdiffusion into the Si/oxide interface. The Ge atoms at Si/oxide interface act as trap centers, and the strained-Si nMOSFET with thermal gate oxide yields a much larger flicker noise than the control Si device. The Ge outdiffusion is suppressed for the device with the low temperature (700 °C) tetraethylorthosilicate gate oxide. The capacitance-voltage measurements of the strained-Si devices with thermal oxide also show that the Si/oxide interface trap density increases and the Si-SiGe heterojunction is smeared out due to the Ge outdiffusion.

    Original languageEnglish
    Pages (from-to)693-695
    Number of pages3
    JournalIEEE Electron Device Letters
    Volume25
    Issue number10
    DOIs
    Publication statusPublished - 2004 Oct 1

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

    Fingerprint Dive into the research topics of 'Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs'. Together they form a unique fingerprint.

    Cite this