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Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures
S. Y. Liao, C. C. Lu, T. Chang, C. F. Huang, C. H. Cheng*, L. B. Chang
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
6
Citations
(Scopus)