Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures

S. Y. Liao, C. C. Lu, T. Chang, C. F. Huang, Chun-Hu Cheng, L. B. Chang

Research output: Contribution to journalArticle

3 Citations (Scopus)


Compared to AlGaN/GaN HEMT with 0.15 μm T-gate length, the AlInN/AlN/GaN one exhibits much higher current density and transconductance of 1558 mA/mm at Vd = 2 V and 330 mS/mm, respectively. The high extrinsic f t and fmax of 82 GHz and 70 GHz are extracted from AlInN/AlN/GaN HEMT. Besides, we find that the transconductance roll-off is significant in AlGaN/GaN, but largely improved in AlInN/AlN/GaN HEMT, suggesting that the high carrier density and lattice-matched epitaxial heterostructure is important to reach both large RF output power and high operation frequency, especially for an aggressively gate length scaling.

Original languageEnglish
Pages (from-to)6243-6246
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Issue number8
Publication statusPublished - 2014 Jan 1



  • 2DEG
  • AlInN/AlN/GaN
  • High-electron mobility transistors (HEMTs)

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this