GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror

Y. J. Lee; J. M. Hwang; T. C. Hsu; M. H. Hsieh; M. J. Jou; B. J. Lee; T. C. Lu; H. C. Kuo; S. C. Wang

doi:10.1109/LPT.2006.871136

GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror

Y. J. Lee, J. M. Hwang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee, T. C. Lu, H. C. Kuo, S. C. Wang

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

A GaN-based light-emitting diodes (LEDs) with V-shaped sapphire facet reflector was fabricated using the double transferred scheme and sapphire chemical wet etching. The {1-102} R-plane V-shaped facet reflector with a 57° against {0001} C-axis has the superior capability for enhancing the light extraction efficiency. The light output power of the V-shaped sapphire facet reflector LED was 1.4 times higher than that of a flat reflector LED at an injection current of 20 mA. The significant improvement is attributable to the geometrical shape of sapphire facet reflector that efficiently redirects the guided light inside the chip toward to the top escape-cone of the LED surface.

Original language	English
Pages (from-to)	724-726
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	18
Issue number	5
DOIs	https://doi.org/10.1109/LPT.2006.871136
Publication status	Published - 2006 Mar 1
Externally published	Yes

Keywords

GaN
Light-emitting diode (LED)
Sapphire chemical wet etching

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2006.871136

Cite this

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title = "GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror",

abstract = "A GaN-based light-emitting diodes (LEDs) with V-shaped sapphire facet reflector was fabricated using the double transferred scheme and sapphire chemical wet etching. The {1-102} R-plane V-shaped facet reflector with a 57° against {0001} C-axis has the superior capability for enhancing the light extraction efficiency. The light output power of the V-shaped sapphire facet reflector LED was 1.4 times higher than that of a flat reflector LED at an injection current of 20 mA. The significant improvement is attributable to the geometrical shape of sapphire facet reflector that efficiently redirects the guided light inside the chip toward to the top escape-cone of the LED surface.",

keywords = "GaN, Light-emitting diode (LED), Sapphire chemical wet etching",

author = "Lee, {Y. J.} and Hwang, {J. M.} and Hsu, {T. C.} and Hsieh, {M. H.} and Jou, {M. J.} and Lee, {B. J.} and Lu, {T. C.} and Kuo, {H. C.} and Wang, {S. C.}",

year = "2006",

month = mar,

day = "1",

doi = "10.1109/LPT.2006.871136",

language = "English",

volume = "18",

pages = "724--726",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

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TY - JOUR

T1 - GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror

AU - Lee, Y. J.

AU - Hwang, J. M.

AU - Hsu, T. C.

AU - Hsieh, M. H.

AU - Jou, M. J.

AU - Lee, B. J.

AU - Lu, T. C.

AU - Kuo, H. C.

AU - Wang, S. C.

PY - 2006/3/1

Y1 - 2006/3/1

N2 - A GaN-based light-emitting diodes (LEDs) with V-shaped sapphire facet reflector was fabricated using the double transferred scheme and sapphire chemical wet etching. The {1-102} R-plane V-shaped facet reflector with a 57° against {0001} C-axis has the superior capability for enhancing the light extraction efficiency. The light output power of the V-shaped sapphire facet reflector LED was 1.4 times higher than that of a flat reflector LED at an injection current of 20 mA. The significant improvement is attributable to the geometrical shape of sapphire facet reflector that efficiently redirects the guided light inside the chip toward to the top escape-cone of the LED surface.

AB - A GaN-based light-emitting diodes (LEDs) with V-shaped sapphire facet reflector was fabricated using the double transferred scheme and sapphire chemical wet etching. The {1-102} R-plane V-shaped facet reflector with a 57° against {0001} C-axis has the superior capability for enhancing the light extraction efficiency. The light output power of the V-shaped sapphire facet reflector LED was 1.4 times higher than that of a flat reflector LED at an injection current of 20 mA. The significant improvement is attributable to the geometrical shape of sapphire facet reflector that efficiently redirects the guided light inside the chip toward to the top escape-cone of the LED surface.

KW - GaN

KW - Light-emitting diode (LED)

KW - Sapphire chemical wet etching

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DO - 10.1109/LPT.2006.871136

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SP - 724

EP - 726

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 5

ER -

GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror

Abstract

Keywords

ASJC Scopus subject areas

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