GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror

Y. J. Lee, J. M. Hwang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee, T. C. Lu, H. C. Kuo, S. C. Wang

    Research output: Contribution to journalArticlepeer-review

    13 Citations (Scopus)


    A GaN-based light-emitting diodes (LEDs) with V-shaped sapphire facet reflector was fabricated using the double transferred scheme and sapphire chemical wet etching. The {1-102} R-plane V-shaped facet reflector with a 57° against {0001} C-axis has the superior capability for enhancing the light extraction efficiency. The light output power of the V-shaped sapphire facet reflector LED was 1.4 times higher than that of a flat reflector LED at an injection current of 20 mA. The significant improvement is attributable to the geometrical shape of sapphire facet reflector that efficiently redirects the guided light inside the chip toward to the top escape-cone of the LED surface.

    Original languageEnglish
    Pages (from-to)724-726
    Number of pages3
    JournalIEEE Photonics Technology Letters
    Issue number5
    Publication statusPublished - 2006 Mar 1


    • GaN
    • Light-emitting diode (LED)
    • Sapphire chemical wet etching

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Electrical and Electronic Engineering


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