GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror

Y. J. Lee, J. M. Hwang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee, T. C. Lu, H. C. Kuo, S. C. Wang

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12 Citations (Scopus)

Abstract

A GaN-based light-emitting diodes (LEDs) with V-shaped sapphire facet reflector was fabricated using the double transferred scheme and sapphire chemical wet etching. The {1-102} R-plane V-shaped facet reflector with a 57° against {0001} C-axis has the superior capability for enhancing the light extraction efficiency. The light output power of the V-shaped sapphire facet reflector LED was 1.4 times higher than that of a flat reflector LED at an injection current of 20 mA. The significant improvement is attributable to the geometrical shape of sapphire facet reflector that efficiently redirects the guided light inside the chip toward to the top escape-cone of the LED surface.

Original languageEnglish
Pages (from-to)724-726
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number5
DOIs
Publication statusPublished - 2006 Mar 1

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Keywords

  • GaN
  • Light-emitting diode (LED)
  • Sapphire chemical wet etching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Lee, Y. J., Hwang, J. M., Hsu, T. C., Hsieh, M. H., Jou, M. J., Lee, B. J., Lu, T. C., Kuo, H. C., & Wang, S. C. (2006). GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror. IEEE Photonics Technology Letters, 18(5), 724-726. https://doi.org/10.1109/LPT.2006.871136