Gamma-Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides

Chien Liu; Yi Chun Tung; Tian Li Wu; Chun Hu Cheng; Chih Yang Tseng; Hsuan Han Chen; Hsi Han Chen; Jun Ma; Chien Liang Lin; Zhi Wei Zheng; Wu Ching Chou; Hsiao Hsuan Hsu

doi:10.1002/pssr.201900414

Gamma-Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides

Chien Liu, Yi Chun Tung, Tian Li Wu, Chun Hu Cheng, Chih Yang Tseng, Hsuan Han Chen, Hsi Han Chen, Jun Ma, Chien Liang Lin, Zhi Wei Zheng, Wu Ching Chou, Hsiao Hsuan Hsu^*

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Herein, the gamma-ray irradiation effect on ferroelectric HfAlO_x capacitors for biomedical and space applications is investigated. The experimental results focus on the observation of ferroelectric polarization characteristics in support of different defect mechanisms induced by annealing, endurance cycling, and gamma-ray irradiation. It is found that the HfAlO_x with low Al doping of 6.5% become more vulnerable to radiation exposure, but a remarkable improvement in 9%-Al-doped HfAlO_x due to less oxygen vacancies is demonstrated. In addition, the results also confirm that the fatigue property of ferroelectric HfAlO_x capacitor is determined by the electric-stress-induced defect during endurance cycling, not mainly contributed by irradiation damage, which shows the potential for memory applications in rigorous irradiation environment.

Original language	English
Article number	1900414
Journal	Physica Status Solidi - Rapid Research Letters
Volume	13
Issue number	12
DOIs	https://doi.org/10.1002/pssr.201900414
Publication status	Published - 2019 Dec 1

Keywords

endurance
fatigue
ferroelectric capacitors
gamma-ray irradiation
hafnium aluminum oxide

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

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10.1002/pssr.201900414

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@article{ebfa46fb69804491815bd17cc4308d32,

title = "Gamma-Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides",

abstract = "Herein, the gamma-ray irradiation effect on ferroelectric HfAlOx capacitors for biomedical and space applications is investigated. The experimental results focus on the observation of ferroelectric polarization characteristics in support of different defect mechanisms induced by annealing, endurance cycling, and gamma-ray irradiation. It is found that the HfAlOx with low Al doping of 6.5% become more vulnerable to radiation exposure, but a remarkable improvement in 9%-Al-doped HfAlOx due to less oxygen vacancies is demonstrated. In addition, the results also confirm that the fatigue property of ferroelectric HfAlOx capacitor is determined by the electric-stress-induced defect during endurance cycling, not mainly contributed by irradiation damage, which shows the potential for memory applications in rigorous irradiation environment.",

keywords = "endurance, fatigue, ferroelectric capacitors, gamma-ray irradiation, hafnium aluminum oxide",

author = "Chien Liu and Tung, {Yi Chun} and Wu, {Tian Li} and Cheng, {Chun Hu} and Tseng, {Chih Yang} and Chen, {Hsuan Han} and Chen, {Hsi Han} and Jun Ma and Lin, {Chien Liang} and Zheng, {Zhi Wei} and Chou, {Wu Ching} and Hsu, {Hsiao Hsuan}",

note = "Publisher Copyright: {\textcopyright} 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2019",

month = dec,

day = "1",

doi = "10.1002/pssr.201900414",

language = "English",

volume = "13",

journal = "Physica Status Solidi - Rapid Research Letters",

issn = "1862-6254",

publisher = "Wiley-VCH Verlag",

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TY - JOUR

T1 - Gamma-Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides

AU - Liu, Chien

AU - Tung, Yi Chun

AU - Wu, Tian Li

AU - Cheng, Chun Hu

AU - Tseng, Chih Yang

AU - Chen, Hsuan Han

AU - Chen, Hsi Han

AU - Ma, Jun

AU - Lin, Chien Liang

AU - Zheng, Zhi Wei

AU - Chou, Wu Ching

AU - Hsu, Hsiao Hsuan

PY - 2019/12/1

Y1 - 2019/12/1

N2 - Herein, the gamma-ray irradiation effect on ferroelectric HfAlOx capacitors for biomedical and space applications is investigated. The experimental results focus on the observation of ferroelectric polarization characteristics in support of different defect mechanisms induced by annealing, endurance cycling, and gamma-ray irradiation. It is found that the HfAlOx with low Al doping of 6.5% become more vulnerable to radiation exposure, but a remarkable improvement in 9%-Al-doped HfAlOx due to less oxygen vacancies is demonstrated. In addition, the results also confirm that the fatigue property of ferroelectric HfAlOx capacitor is determined by the electric-stress-induced defect during endurance cycling, not mainly contributed by irradiation damage, which shows the potential for memory applications in rigorous irradiation environment.

AB - Herein, the gamma-ray irradiation effect on ferroelectric HfAlOx capacitors for biomedical and space applications is investigated. The experimental results focus on the observation of ferroelectric polarization characteristics in support of different defect mechanisms induced by annealing, endurance cycling, and gamma-ray irradiation. It is found that the HfAlOx with low Al doping of 6.5% become more vulnerable to radiation exposure, but a remarkable improvement in 9%-Al-doped HfAlOx due to less oxygen vacancies is demonstrated. In addition, the results also confirm that the fatigue property of ferroelectric HfAlOx capacitor is determined by the electric-stress-induced defect during endurance cycling, not mainly contributed by irradiation damage, which shows the potential for memory applications in rigorous irradiation environment.

KW - endurance

KW - fatigue

KW - ferroelectric capacitors

KW - gamma-ray irradiation

KW - hafnium aluminum oxide

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DO - 10.1002/pssr.201900414

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SN - 1862-6254

VL - 13

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

IS - 12

M1 - 1900414

ER -

Gamma-Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides

Abstract

Keywords

ASJC Scopus subject areas

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