Gamma-Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides

Chien Liu, Yi Chun Tung, Tian Li Wu, Chun Hu Cheng, Chih Yang Tseng, Hsuan Han Chen, Hsi Han Chen, Jun Ma, Chien Liang Lin, Zhi Wei Zheng, Wu Ching Chou, Hsiao Hsuan Hsu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Herein, the gamma-ray irradiation effect on ferroelectric HfAlOx capacitors for biomedical and space applications is investigated. The experimental results focus on the observation of ferroelectric polarization characteristics in support of different defect mechanisms induced by annealing, endurance cycling, and gamma-ray irradiation. It is found that the HfAlOx with low Al doping of 6.5% become more vulnerable to radiation exposure, but a remarkable improvement in 9%-Al-doped HfAlOx due to less oxygen vacancies is demonstrated. In addition, the results also confirm that the fatigue property of ferroelectric HfAlOx capacitor is determined by the electric-stress-induced defect during endurance cycling, not mainly contributed by irradiation damage, which shows the potential for memory applications in rigorous irradiation environment.

Original languageEnglish
Article number1900414
JournalPhysica Status Solidi - Rapid Research Letters
Issue number12
Publication statusPublished - 2019 Dec 1


  • endurance
  • fatigue
  • ferroelectric capacitors
  • gamma-ray irradiation
  • hafnium aluminum oxide

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics


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