Gamma-Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides

Chien Liu, Yi Chun Tung, Tian Li Wu, Chun Hu Cheng, Chih Yang Tseng, Hsuan Han Chen, Hsi Han Chen, Jun Ma, Chien Liang Lin, Zhi Wei Zheng, Wu Ching Chou, Hsiao Hsuan Hsu

Research output: Contribution to journalArticle

Abstract

Herein, the gamma-ray irradiation effect on ferroelectric HfAlOx capacitors for biomedical and space applications is investigated. The experimental results focus on the observation of ferroelectric polarization characteristics in support of different defect mechanisms induced by annealing, endurance cycling, and gamma-ray irradiation. It is found that the HfAlOx with low Al doping of 6.5% become more vulnerable to radiation exposure, but a remarkable improvement in 9%-Al-doped HfAlOx due to less oxygen vacancies is demonstrated. In addition, the results also confirm that the fatigue property of ferroelectric HfAlOx capacitor is determined by the electric-stress-induced defect during endurance cycling, not mainly contributed by irradiation damage, which shows the potential for memory applications in rigorous irradiation environment.

Original languageEnglish
Article number1900414
JournalPhysica Status Solidi - Rapid Research Letters
Volume13
Issue number12
DOIs
Publication statusPublished - 2019 Dec 1

Fingerprint

Ferroelectric devices
Hafnium
hafnium oxides
Aluminum Oxide
Gamma rays
aluminum oxides
Irradiation
gamma rays
Ferroelectric materials
Aluminum
irradiation
Oxides
endurance
capacitors
Durability
Capacitors
Defects
cycles
polarization characteristics
Space applications

Keywords

  • endurance
  • fatigue
  • ferroelectric capacitors
  • gamma-ray irradiation
  • hafnium aluminum oxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Gamma-Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides. / Liu, Chien; Tung, Yi Chun; Wu, Tian Li; Cheng, Chun Hu; Tseng, Chih Yang; Chen, Hsuan Han; Chen, Hsi Han; Ma, Jun; Lin, Chien Liang; Zheng, Zhi Wei; Chou, Wu Ching; Hsu, Hsiao Hsuan.

In: Physica Status Solidi - Rapid Research Letters, Vol. 13, No. 12, 1900414, 01.12.2019.

Research output: Contribution to journalArticle

Liu, C, Tung, YC, Wu, TL, Cheng, CH, Tseng, CY, Chen, HH, Chen, HH, Ma, J, Lin, CL, Zheng, ZW, Chou, WC & Hsu, HH 2019, 'Gamma-Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides', Physica Status Solidi - Rapid Research Letters, vol. 13, no. 12, 1900414. https://doi.org/10.1002/pssr.201900414
Liu, Chien ; Tung, Yi Chun ; Wu, Tian Li ; Cheng, Chun Hu ; Tseng, Chih Yang ; Chen, Hsuan Han ; Chen, Hsi Han ; Ma, Jun ; Lin, Chien Liang ; Zheng, Zhi Wei ; Chou, Wu Ching ; Hsu, Hsiao Hsuan. / Gamma-Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides. In: Physica Status Solidi - Rapid Research Letters. 2019 ; Vol. 13, No. 12.
@article{db96633c5fc141588bee05fa05d8e4d0,
title = "Gamma-Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides",
abstract = "Herein, the gamma-ray irradiation effect on ferroelectric HfAlOx capacitors for biomedical and space applications is investigated. The experimental results focus on the observation of ferroelectric polarization characteristics in support of different defect mechanisms induced by annealing, endurance cycling, and gamma-ray irradiation. It is found that the HfAlOx with low Al doping of 6.5{\%} become more vulnerable to radiation exposure, but a remarkable improvement in 9{\%}-Al-doped HfAlOx due to less oxygen vacancies is demonstrated. In addition, the results also confirm that the fatigue property of ferroelectric HfAlOx capacitor is determined by the electric-stress-induced defect during endurance cycling, not mainly contributed by irradiation damage, which shows the potential for memory applications in rigorous irradiation environment.",
keywords = "endurance, fatigue, ferroelectric capacitors, gamma-ray irradiation, hafnium aluminum oxide",
author = "Chien Liu and Tung, {Yi Chun} and Wu, {Tian Li} and Cheng, {Chun Hu} and Tseng, {Chih Yang} and Chen, {Hsuan Han} and Chen, {Hsi Han} and Jun Ma and Lin, {Chien Liang} and Zheng, {Zhi Wei} and Chou, {Wu Ching} and Hsu, {Hsiao Hsuan}",
year = "2019",
month = "12",
day = "1",
doi = "10.1002/pssr.201900414",
language = "English",
volume = "13",
journal = "Physica Status Solidi - Rapid Research Letters",
issn = "1862-6254",
publisher = "Wiley-VCH Verlag",
number = "12",

}

TY - JOUR

T1 - Gamma-Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides

AU - Liu, Chien

AU - Tung, Yi Chun

AU - Wu, Tian Li

AU - Cheng, Chun Hu

AU - Tseng, Chih Yang

AU - Chen, Hsuan Han

AU - Chen, Hsi Han

AU - Ma, Jun

AU - Lin, Chien Liang

AU - Zheng, Zhi Wei

AU - Chou, Wu Ching

AU - Hsu, Hsiao Hsuan

PY - 2019/12/1

Y1 - 2019/12/1

N2 - Herein, the gamma-ray irradiation effect on ferroelectric HfAlOx capacitors for biomedical and space applications is investigated. The experimental results focus on the observation of ferroelectric polarization characteristics in support of different defect mechanisms induced by annealing, endurance cycling, and gamma-ray irradiation. It is found that the HfAlOx with low Al doping of 6.5% become more vulnerable to radiation exposure, but a remarkable improvement in 9%-Al-doped HfAlOx due to less oxygen vacancies is demonstrated. In addition, the results also confirm that the fatigue property of ferroelectric HfAlOx capacitor is determined by the electric-stress-induced defect during endurance cycling, not mainly contributed by irradiation damage, which shows the potential for memory applications in rigorous irradiation environment.

AB - Herein, the gamma-ray irradiation effect on ferroelectric HfAlOx capacitors for biomedical and space applications is investigated. The experimental results focus on the observation of ferroelectric polarization characteristics in support of different defect mechanisms induced by annealing, endurance cycling, and gamma-ray irradiation. It is found that the HfAlOx with low Al doping of 6.5% become more vulnerable to radiation exposure, but a remarkable improvement in 9%-Al-doped HfAlOx due to less oxygen vacancies is demonstrated. In addition, the results also confirm that the fatigue property of ferroelectric HfAlOx capacitor is determined by the electric-stress-induced defect during endurance cycling, not mainly contributed by irradiation damage, which shows the potential for memory applications in rigorous irradiation environment.

KW - endurance

KW - fatigue

KW - ferroelectric capacitors

KW - gamma-ray irradiation

KW - hafnium aluminum oxide

UR - http://www.scopus.com/inward/record.url?scp=85076441221&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85076441221&partnerID=8YFLogxK

U2 - 10.1002/pssr.201900414

DO - 10.1002/pssr.201900414

M3 - Article

AN - SCOPUS:85076441221

VL - 13

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

SN - 1862-6254

IS - 12

M1 - 1900414

ER -