Abstract
We demonstrate novel GaAs/In 0.5Ga 0.5P high-speed laser power converters (LPCs), which not only can detect the envelope of incoming high-speed optical data but also can efficiently convert its optical dc component to dc electrical power. By utilizing the graded p-type GaAs and n-type In 0.5Ga 0.5P layers as photoabsorption (P) and collector (C) layers, respectively, the problem of slow-motion holes under 830-nm-optical-wavelength excitation and the conduction-band-offset-induced electron blocking effect between the P/C layers, which seriously limit the high-speed performance of LPC, can both be eliminated. Furthermore, by using the undercut mesa structure of the In 0.5Ga 0.5P C layer to further reduce the large junction capacitance under forward operation, we can achieve invariable high-speed performance (∼9 GHz) from zero to near turn-on voltage (+0.8 V), which corresponds to the operation point of our LPC with the maximum power conversion efficiency (∼ 15%).
Original language | English |
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Article number | 6151018 |
Pages (from-to) | 561-563 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 33 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2012 Apr |
Externally published | Yes |
Keywords
- Photodiodes (PDs)
- photovoltaic
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering