GaAs/In 0.5Ga 0.5P laser power converter with undercut mesa for simultaneous high-speed data detection and DC electrical power generation

Jin Wei Shi*, Cheng Yo Tsai, Chan Shan Yang, Feng Ming Kuo, Yue Ming Hsin, J. E. Bowers, Ci Ling Pan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

We demonstrate novel GaAs/In 0.5Ga 0.5P high-speed laser power converters (LPCs), which not only can detect the envelope of incoming high-speed optical data but also can efficiently convert its optical dc component to dc electrical power. By utilizing the graded p-type GaAs and n-type In 0.5Ga 0.5P layers as photoabsorption (P) and collector (C) layers, respectively, the problem of slow-motion holes under 830-nm-optical-wavelength excitation and the conduction-band-offset-induced electron blocking effect between the P/C layers, which seriously limit the high-speed performance of LPC, can both be eliminated. Furthermore, by using the undercut mesa structure of the In 0.5Ga 0.5P C layer to further reduce the large junction capacitance under forward operation, we can achieve invariable high-speed performance (∼9 GHz) from zero to near turn-on voltage (+0.8 V), which corresponds to the operation point of our LPC with the maximum power conversion efficiency (∼ 15%).

Original languageEnglish
Article number6151018
Pages (from-to)561-563
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number4
DOIs
Publication statusPublished - 2012 Apr
Externally publishedYes

Keywords

  • Photodiodes (PDs)
  • photovoltaic

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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