Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate

Hsiao Hsuan Hsu; Chun Yen Chang; Chun Hu Cheng; Shu Hung Yu; Ching Yuan Su; Chung Yen Su

doi:10.1016/j.sse.2013.08.009

Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate

Hsiao Hsuan Hsu, Chun Yen Chang, Chun Hu Cheng^*, Shu Hung Yu, Ching Yuan Su, Chung Yen Su

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

This study demonstrates the feasibility of producing an InGaZnO thin-film transistor (TFT) using a high-κ germanium oxide (GeO₂)/titanium oxide (TiO₂)/GeO₂ gate stack on a flexible polycarbonate substrate. The flexible TFT exhibited a small sub-threshold swing of 0.132 V/decade, an acceptable field effect mobility of 8 cm²/(V s), and a robust I_on/I_off ratio of 2.4 × 10⁷. The improved device performance can be attributed to the combined effect of high-κ TiO₂ and the large band gap of GeO₂ that exhibits a tendency to remain in a Ge⁴⁺ oxidation state at room temperature.

Original language	English
Pages (from-to)	194-197
Number of pages	4
Journal	Solid-State Electronics
Volume	89
DOIs	https://doi.org/10.1016/j.sse.2013.08.009
Publication status	Published - 2013

Keywords

GeO
InGaZnO (IGZO)
Thin-film transistor (TFT)
TiO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.sse.2013.08.009

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@article{c8682fc9cc384a1e8dd5094ee4641de5,

title = "Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate",

abstract = "This study demonstrates the feasibility of producing an InGaZnO thin-film transistor (TFT) using a high-κ germanium oxide (GeO2)/titanium oxide (TiO2)/GeO2 gate stack on a flexible polycarbonate substrate. The flexible TFT exhibited a small sub-threshold swing of 0.132 V/decade, an acceptable field effect mobility of 8 cm2/(V s), and a robust Ion/Ioff ratio of 2.4 × 107. The improved device performance can be attributed to the combined effect of high-κ TiO2 and the large band gap of GeO2 that exhibits a tendency to remain in a Ge4+ oxidation state at room temperature.",

keywords = "GeO, InGaZnO (IGZO), Thin-film transistor (TFT), TiO",

author = "Hsu, {Hsiao Hsuan} and Chang, {Chun Yen} and Cheng, {Chun Hu} and Yu, {Shu Hung} and Su, {Ching Yuan} and Su, {Chung Yen}",

note = "Funding Information: This work was supported by the National Science Council (NSC) of Taiwan, Republic of China , under contract No. NSC 102-2221-E-003-019 .",

year = "2013",

doi = "10.1016/j.sse.2013.08.009",

language = "English",

volume = "89",

pages = "194--197",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate

AU - Hsu, Hsiao Hsuan

AU - Chang, Chun Yen

AU - Cheng, Chun Hu

AU - Yu, Shu Hung

AU - Su, Ching Yuan

AU - Su, Chung Yen

N1 - Funding Information: This work was supported by the National Science Council (NSC) of Taiwan, Republic of China , under contract No. NSC 102-2221-E-003-019 .

PY - 2013

Y1 - 2013

N2 - This study demonstrates the feasibility of producing an InGaZnO thin-film transistor (TFT) using a high-κ germanium oxide (GeO2)/titanium oxide (TiO2)/GeO2 gate stack on a flexible polycarbonate substrate. The flexible TFT exhibited a small sub-threshold swing of 0.132 V/decade, an acceptable field effect mobility of 8 cm2/(V s), and a robust Ion/Ioff ratio of 2.4 × 107. The improved device performance can be attributed to the combined effect of high-κ TiO2 and the large band gap of GeO2 that exhibits a tendency to remain in a Ge4+ oxidation state at room temperature.

AB - This study demonstrates the feasibility of producing an InGaZnO thin-film transistor (TFT) using a high-κ germanium oxide (GeO2)/titanium oxide (TiO2)/GeO2 gate stack on a flexible polycarbonate substrate. The flexible TFT exhibited a small sub-threshold swing of 0.132 V/decade, an acceptable field effect mobility of 8 cm2/(V s), and a robust Ion/Ioff ratio of 2.4 × 107. The improved device performance can be attributed to the combined effect of high-κ TiO2 and the large band gap of GeO2 that exhibits a tendency to remain in a Ge4+ oxidation state at room temperature.

KW - GeO

KW - InGaZnO (IGZO)

KW - Thin-film transistor (TFT)

KW - TiO

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U2 - 10.1016/j.sse.2013.08.009

DO - 10.1016/j.sse.2013.08.009

M3 - Article

AN - SCOPUS:84884765653

SN - 0038-1101

VL - 89

SP - 194

EP - 197

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate

Abstract

Keywords

ASJC Scopus subject areas

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