Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate

Hsiao Hsuan Hsu, Chun Yen Chang, Chun Hu Cheng*, Shu Hung Yu, Ching Yuan Su, Chung Yen Su

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

This study demonstrates the feasibility of producing an InGaZnO thin-film transistor (TFT) using a high-κ germanium oxide (GeO2)/titanium oxide (TiO2)/GeO2 gate stack on a flexible polycarbonate substrate. The flexible TFT exhibited a small sub-threshold swing of 0.132 V/decade, an acceptable field effect mobility of 8 cm2/(V s), and a robust Ion/Ioff ratio of 2.4 × 107. The improved device performance can be attributed to the combined effect of high-κ TiO2 and the large band gap of GeO2 that exhibits a tendency to remain in a Ge4+ oxidation state at room temperature.

Original languageEnglish
Pages (from-to)194-197
Number of pages4
JournalSolid-State Electronics
Volume89
DOIs
Publication statusPublished - 2013

Keywords

  • GeO
  • InGaZnO (IGZO)
  • Thin-film transistor (TFT)
  • TiO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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