Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate

Hsiao Hsuan Hsu, Chun Yen Chang, Chun-Hu Cheng, Shu Hung Yu, Ching Yuan Su, Chung-Yen Su

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

This study demonstrates the feasibility of producing an InGaZnO thin-film transistor (TFT) using a high-κ germanium oxide (GeO2)/titanium oxide (TiO2)/GeO2 gate stack on a flexible polycarbonate substrate. The flexible TFT exhibited a small sub-threshold swing of 0.132 V/decade, an acceptable field effect mobility of 8 cm2/(V s), and a robust Ion/Ioff ratio of 2.4 × 107. The improved device performance can be attributed to the combined effect of high-κ TiO2 and the large band gap of GeO2 that exhibits a tendency to remain in a Ge4+ oxidation state at room temperature.

Original languageEnglish
Pages (from-to)194-197
Number of pages4
JournalSolid-State Electronics
Volume89
DOIs
Publication statusPublished - 2013 Oct 4

Fingerprint

polycarbonate
Gate dielectrics
polycarbonates
Thin film transistors
Polycarbonates
transistors
Germanium oxides
germanium oxides
Titanium oxides
room temperature
Substrates
thin films
titanium oxides
tendencies
Energy gap
Oxidation
Temperature
oxidation
thresholds
Ions

Keywords

  • GeO
  • InGaZnO (IGZO)
  • Thin-film transistor (TFT)
  • TiO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate. / Hsu, Hsiao Hsuan; Chang, Chun Yen; Cheng, Chun-Hu; Yu, Shu Hung; Su, Ching Yuan; Su, Chung-Yen.

In: Solid-State Electronics, Vol. 89, 04.10.2013, p. 194-197.

Research output: Contribution to journalArticle

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