Full spectrum dielectric response of Bi2(Zn1/3Nb2/3)O7 thin films in terahertz, infrared and optical frequency regions

Hsiu Fung Cheng; Yi Chun Chen; Hsiang Lin Liu; Luu Gen Hwa; Petr Kužel; Jan Petzelt; I. Nan Lin

doi:10.1016/S0254-0584(02)00256-0

Full spectrum dielectric response of Bi₂(Zn_1/3Nb_2/3)O₇ thin films in terahertz, infrared and optical frequency regions

Hsiu Fung Cheng^*, Yi Chun Chen, Hsiang Lin Liu, Luu Gen Hwa, Petr Kužel, Jan Petzelt, I. Nan Lin

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Dielectric response of Bi₂(Zn_1/3Nb_2/3)₂O₇, BiZN, thin films was characterized by terahertz (THz), Fourier transform infrared (FTIR) and optical spectroscopies. FTIR measurements reveal the presence of lattice vibrational modes at f₁ = 330 cm^-1 and f₂ = 526 cm^-1. Real part of dielectric constant (ε₁ ≅ 21.5 at f = 200 cm^-1) for the BiZN thin films increases moderately with frequency and drops abruptly at the polarizational resonances corresponding to f₁ and f₂, approaching a low constant value (ε₁ ≅ 2.4-3.6) in high frequency regime (f > 700 cm^-1) High frequency response of BiZN thin films is essentially the same as the dielectric properties measured in optical frequency regime, indicating that there is no lattice vibrational mode beyond 700 cm^-1. The dielectric properties of the films in f > 700 cm^-1 regime is presumably contributed by electronic polarization only. In contrast, the low frequency dielectric constant (ε₁ = 21.5) is still smaller than the ₁-value measured by THz-spectroscopic technique (₁)_THz = 30-38. Such phenomenon infers that there exists additional lattice vibrational mode in between 0.8 and 6 THz (200 cm^-1) frequency regime.

Original language	English
Pages (from-to)	161-163
Number of pages	3
Journal	Materials Chemistry and Physics
Volume	79
Issue number	2-3
DOIs	https://doi.org/10.1016/S0254-0584(02)00256-0
Publication status	Published - 2003 Apr 10

Keywords

Microwave dielectric
Optical properties
Thin films

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

Access to Document

10.1016/S0254-0584(02)00256-0

Cite this

@article{70b4bdb9101e4042b043afa9b3d73701,

title = "Full spectrum dielectric response of Bi2(Zn1/3Nb2/3)O7 thin films in terahertz, infrared and optical frequency regions",

abstract = "Dielectric response of Bi2(Zn1/3Nb2/3)2O7, BiZN, thin films was characterized by terahertz (THz), Fourier transform infrared (FTIR) and optical spectroscopies. FTIR measurements reveal the presence of lattice vibrational modes at f1 = 330 cm-1 and f2 = 526 cm-1. Real part of dielectric constant (ε1 ≅ 21.5 at f = 200 cm-1) for the BiZN thin films increases moderately with frequency and drops abruptly at the polarizational resonances corresponding to f1 and f2, approaching a low constant value (ε1 ≅ 2.4-3.6) in high frequency regime (f > 700 cm-1) High frequency response of BiZN thin films is essentially the same as the dielectric properties measured in optical frequency regime, indicating that there is no lattice vibrational mode beyond 700 cm-1. The dielectric properties of the films in f > 700 cm-1 regime is presumably contributed by electronic polarization only. In contrast, the low frequency dielectric constant (ε1 = 21.5) is still smaller than the 1-value measured by THz-spectroscopic technique (1)THz = 30-38. Such phenomenon infers that there exists additional lattice vibrational mode in between 0.8 and 6 THz (200 cm-1) frequency regime.",

keywords = "Microwave dielectric, Optical properties, Thin films",

author = "Cheng, {Hsiu Fung} and Chen, {Yi Chun} and Liu, {Hsiang Lin} and Hwa, {Luu Gen} and Petr Ku{\v z}el and Jan Petzelt and Lin, {I. Nan}",

note = "Funding Information: Financial support from National Science Council, ROC, through the project No. NSC 90-2112-M-003-028 is gratefully acknowledged by the authors.",

year = "2003",

month = apr,

day = "10",

doi = "10.1016/S0254-0584(02)00256-0",

language = "English",

volume = "79",

pages = "161--163",

journal = "Materials Chemistry and Physics",

issn = "0254-0584",

publisher = "Elsevier BV",

number = "2-3",

}

TY - JOUR

T1 - Full spectrum dielectric response of Bi2(Zn1/3Nb2/3)O7 thin films in terahertz, infrared and optical frequency regions

AU - Cheng, Hsiu Fung

AU - Chen, Yi Chun

AU - Liu, Hsiang Lin

AU - Hwa, Luu Gen

AU - Kužel, Petr

AU - Petzelt, Jan

AU - Lin, I. Nan

N1 - Funding Information: Financial support from National Science Council, ROC, through the project No. NSC 90-2112-M-003-028 is gratefully acknowledged by the authors.

PY - 2003/4/10

Y1 - 2003/4/10

N2 - Dielectric response of Bi2(Zn1/3Nb2/3)2O7, BiZN, thin films was characterized by terahertz (THz), Fourier transform infrared (FTIR) and optical spectroscopies. FTIR measurements reveal the presence of lattice vibrational modes at f1 = 330 cm-1 and f2 = 526 cm-1. Real part of dielectric constant (ε1 ≅ 21.5 at f = 200 cm-1) for the BiZN thin films increases moderately with frequency and drops abruptly at the polarizational resonances corresponding to f1 and f2, approaching a low constant value (ε1 ≅ 2.4-3.6) in high frequency regime (f > 700 cm-1) High frequency response of BiZN thin films is essentially the same as the dielectric properties measured in optical frequency regime, indicating that there is no lattice vibrational mode beyond 700 cm-1. The dielectric properties of the films in f > 700 cm-1 regime is presumably contributed by electronic polarization only. In contrast, the low frequency dielectric constant (ε1 = 21.5) is still smaller than the 1-value measured by THz-spectroscopic technique (1)THz = 30-38. Such phenomenon infers that there exists additional lattice vibrational mode in between 0.8 and 6 THz (200 cm-1) frequency regime.

AB - Dielectric response of Bi2(Zn1/3Nb2/3)2O7, BiZN, thin films was characterized by terahertz (THz), Fourier transform infrared (FTIR) and optical spectroscopies. FTIR measurements reveal the presence of lattice vibrational modes at f1 = 330 cm-1 and f2 = 526 cm-1. Real part of dielectric constant (ε1 ≅ 21.5 at f = 200 cm-1) for the BiZN thin films increases moderately with frequency and drops abruptly at the polarizational resonances corresponding to f1 and f2, approaching a low constant value (ε1 ≅ 2.4-3.6) in high frequency regime (f > 700 cm-1) High frequency response of BiZN thin films is essentially the same as the dielectric properties measured in optical frequency regime, indicating that there is no lattice vibrational mode beyond 700 cm-1. The dielectric properties of the films in f > 700 cm-1 regime is presumably contributed by electronic polarization only. In contrast, the low frequency dielectric constant (ε1 = 21.5) is still smaller than the 1-value measured by THz-spectroscopic technique (1)THz = 30-38. Such phenomenon infers that there exists additional lattice vibrational mode in between 0.8 and 6 THz (200 cm-1) frequency regime.

KW - Microwave dielectric

KW - Optical properties

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=0037431173&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037431173&partnerID=8YFLogxK

U2 - 10.1016/S0254-0584(02)00256-0

DO - 10.1016/S0254-0584(02)00256-0

M3 - Article

AN - SCOPUS:0037431173

SN - 0254-0584

VL - 79

SP - 161

EP - 163

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 2-3

ER -