Forward gated-diode measurement of filled traps in high-field stressed thin oxides

Ming Jer Chen; Ting Kuo Kang; Huan Tsung Huang; Chuan Hsi Liu; Yih J. Chang; Kuan Yu Fu

doi:10.1109/16.853050

Forward gated-diode measurement of filled traps in high-field stressed thin oxides

Ming Jer Chen
, Ting Kuo Kang
, Huan Tsung Huang
, Chuan Hsi Liu
, Yih J. Chang
, Kuan Yu Fu

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The forward gated-diode monitoring technique can find its potential applications in assessing the filled traps in MOSFET thin oxides, which are subjected to high-field stressing and then followed by hot-electrons filling scheme. Our measurement of the gate voltage shift associated with the forward current peak produces a power law relation between the filled trap density and the electron stress fluence, indeed in close agreement with that obtained by MOSFET threshold voltage shift.

Original language	English
Pages (from-to)	1682-1683
Number of pages	2
Journal	IEEE Transactions on Electron Devices
Volume	47
Issue number	8
DOIs	https://doi.org/10.1109/16.853050
Publication status	Published - 2000 Aug
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.853050

Cite this

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abstract = "The forward gated-diode monitoring technique can find its potential applications in assessing the filled traps in MOSFET thin oxides, which are subjected to high-field stressing and then followed by hot-electrons filling scheme. Our measurement of the gate voltage shift associated with the forward current peak produces a power law relation between the filled trap density and the electron stress fluence, indeed in close agreement with that obtained by MOSFET threshold voltage shift.",

author = "Chen, \{Ming Jer\} and Kang, \{Ting Kuo\} and Huang, \{Huan Tsung\} and Liu, \{Chuan Hsi\} and Chang, \{Yih J.\} and Fu, \{Kuan Yu\}",

note = "Funding Information: Manuscript received December 2, 1999. This work was supported by the National Science Council under Contract 89-2215-009-049. The review of this brief was arranged by Editor C.-Y. Lu. M.-J. Chen, T.-K. Kang, and H.-T. Huang are with the Department of Electronics Engineering, National Chiao-Tung University, Hsinchu, Taiwan, R.O.C. (e-mail: [email protected]). C.-H. Liu, Y. J. Chang, and K.-Y. Fu are with United Microelectronics Corporation, Hsinchu, Taiwan, R.O.C. Publisher Item Identifier S 0018-9383(00)06050-0.",

year = "2000",

month = aug,

doi = "10.1109/16.853050",

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pages = "1682--1683",

journal = "IEEE Transactions on Electron Devices",

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TY - JOUR

T1 - Forward gated-diode measurement of filled traps in high-field stressed thin oxides

AU - Chen, Ming Jer

AU - Kang, Ting Kuo

AU - Huang, Huan Tsung

AU - Liu, Chuan Hsi

AU - Chang, Yih J.

AU - Fu, Kuan Yu

N1 - Funding Information: Manuscript received December 2, 1999. This work was supported by the National Science Council under Contract 89-2215-009-049. The review of this brief was arranged by Editor C.-Y. Lu. M.-J. Chen, T.-K. Kang, and H.-T. Huang are with the Department of Electronics Engineering, National Chiao-Tung University, Hsinchu, Taiwan, R.O.C. (e-mail: [email protected]). C.-H. Liu, Y. J. Chang, and K.-Y. Fu are with United Microelectronics Corporation, Hsinchu, Taiwan, R.O.C. Publisher Item Identifier S 0018-9383(00)06050-0.

PY - 2000/8

Y1 - 2000/8

N2 - The forward gated-diode monitoring technique can find its potential applications in assessing the filled traps in MOSFET thin oxides, which are subjected to high-field stressing and then followed by hot-electrons filling scheme. Our measurement of the gate voltage shift associated with the forward current peak produces a power law relation between the filled trap density and the electron stress fluence, indeed in close agreement with that obtained by MOSFET threshold voltage shift.

AB - The forward gated-diode monitoring technique can find its potential applications in assessing the filled traps in MOSFET thin oxides, which are subjected to high-field stressing and then followed by hot-electrons filling scheme. Our measurement of the gate voltage shift associated with the forward current peak produces a power law relation between the filled trap density and the electron stress fluence, indeed in close agreement with that obtained by MOSFET threshold voltage shift.

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DO - 10.1109/16.853050

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 8

ER -

Forward gated-diode measurement of filled traps in high-field stressed thin oxides

Abstract

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