Forward gated-diode measurement of filled traps in high-field stressed thin oxides

Ming Jer Chen, Ting Kuo Kang, Huan Tsung Huang, Chuan Hsi Liu, Yih J. Chang, Kuan Yu Fu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The forward gated-diode monitoring technique can find its potential applications in assessing the filled traps in MOSFET thin oxides, which are subjected to high-field stressing and then followed by hot-electrons filling scheme. Our measurement of the gate voltage shift associated with the forward current peak produces a power law relation between the filled trap density and the electron stress fluence, indeed in close agreement with that obtained by MOSFET threshold voltage shift.

Original languageEnglish
Pages (from-to)1682-1683
Number of pages2
JournalIEEE Transactions on Electron Devices
Volume47
Issue number8
DOIs
Publication statusPublished - 2000 Aug 1

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Hot electrons
Threshold voltage
Oxides
Diodes
Electrons
Monitoring
Electric potential

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Forward gated-diode measurement of filled traps in high-field stressed thin oxides. / Chen, Ming Jer; Kang, Ting Kuo; Huang, Huan Tsung; Liu, Chuan Hsi; Chang, Yih J.; Fu, Kuan Yu.

In: IEEE Transactions on Electron Devices, Vol. 47, No. 8, 01.08.2000, p. 1682-1683.

Research output: Contribution to journalArticle

Chen, Ming Jer ; Kang, Ting Kuo ; Huang, Huan Tsung ; Liu, Chuan Hsi ; Chang, Yih J. ; Fu, Kuan Yu. / Forward gated-diode measurement of filled traps in high-field stressed thin oxides. In: IEEE Transactions on Electron Devices. 2000 ; Vol. 47, No. 8. pp. 1682-1683.
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