Forward gated-diode measurement of filled traps in high-field stressed thin oxides

Ming Jer Chen, Ting Kuo Kang, Huan Tsung Huang, Chuan Hsi Liu, Yih J. Chang, Kuan Yu Fu

Research output: Contribution to journalArticle

4 Citations (Scopus)


The forward gated-diode monitoring technique can find its potential applications in assessing the filled traps in MOSFET thin oxides, which are subjected to high-field stressing and then followed by hot-electrons filling scheme. Our measurement of the gate voltage shift associated with the forward current peak produces a power law relation between the filled trap density and the electron stress fluence, indeed in close agreement with that obtained by MOSFET threshold voltage shift.

Original languageEnglish
Pages (from-to)1682-1683
Number of pages2
JournalIEEE Transactions on Electron Devices
Issue number8
Publication statusPublished - 2000 Aug 1


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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