The formation mechanism of nanometer-scale quantum dots assembled on SiO2 were studied. Three gold colloidal particles, aligned in a single electron transistor (SET) chain to form a one-dimensional current path, were bridged on an 80 nm gap between the source and drain metal electrodes. The Silica film was thermally grown on a Si substrate and a patterned Si wafer was used in the experiment. The results show that the particle size of Au between citrate sol and the deposited silica/Si substrate can be controlled around 15 nm with good reproductability due to the stable growth mechanism in the fabrication method.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2004 Jan 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering