Formation mechanism and Coulomb blockade effect in self-assembled gold quantum dots

S. F. Hu, R. L. Yeh, R. S. Liu

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The formation mechanism of nanometer-scale quantum dots assembled on SiO2 were studied. Three gold colloidal particles, aligned in a single electron transistor (SET) chain to form a one-dimensional current path, were bridged on an 80 nm gap between the source and drain metal electrodes. The Silica film was thermally grown on a Si substrate and a patterned Si wafer was used in the experiment. The results show that the particle size of Au between citrate sol and the deposited silica/Si substrate can be controlled around 15 nm with good reproductability due to the stable growth mechanism in the fabrication method.

Original languageEnglish
Pages (from-to)60-64
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number1
Publication statusPublished - 2004 Jan 1

Fingerprint

Coulomb blockade
Semiconductor quantum dots
Gold
Silica
quantum dots
Single electron transistors
gold
silicon dioxide
single electron transistors
Substrates
citrates
Sols
Particle size
wafers
Fabrication
Electrodes
fabrication
electrodes
Metals
metals

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Formation mechanism and Coulomb blockade effect in self-assembled gold quantum dots. / Hu, S. F.; Yeh, R. L.; Liu, R. S.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 1, 01.01.2004, p. 60-64.

Research output: Contribution to journalArticle

@article{9bb4b7bf27da492ebeec0d2a41ce26ac,
title = "Formation mechanism and Coulomb blockade effect in self-assembled gold quantum dots",
abstract = "The formation mechanism of nanometer-scale quantum dots assembled on SiO2 were studied. Three gold colloidal particles, aligned in a single electron transistor (SET) chain to form a one-dimensional current path, were bridged on an 80 nm gap between the source and drain metal electrodes. The Silica film was thermally grown on a Si substrate and a patterned Si wafer was used in the experiment. The results show that the particle size of Au between citrate sol and the deposited silica/Si substrate can be controlled around 15 nm with good reproductability due to the stable growth mechanism in the fabrication method.",
author = "Hu, {S. F.} and Yeh, {R. L.} and Liu, {R. S.}",
year = "2004",
month = "1",
day = "1",
language = "English",
volume = "22",
pages = "60--64",
journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "1",

}

TY - JOUR

T1 - Formation mechanism and Coulomb blockade effect in self-assembled gold quantum dots

AU - Hu, S. F.

AU - Yeh, R. L.

AU - Liu, R. S.

PY - 2004/1/1

Y1 - 2004/1/1

N2 - The formation mechanism of nanometer-scale quantum dots assembled on SiO2 were studied. Three gold colloidal particles, aligned in a single electron transistor (SET) chain to form a one-dimensional current path, were bridged on an 80 nm gap between the source and drain metal electrodes. The Silica film was thermally grown on a Si substrate and a patterned Si wafer was used in the experiment. The results show that the particle size of Au between citrate sol and the deposited silica/Si substrate can be controlled around 15 nm with good reproductability due to the stable growth mechanism in the fabrication method.

AB - The formation mechanism of nanometer-scale quantum dots assembled on SiO2 were studied. Three gold colloidal particles, aligned in a single electron transistor (SET) chain to form a one-dimensional current path, were bridged on an 80 nm gap between the source and drain metal electrodes. The Silica film was thermally grown on a Si substrate and a patterned Si wafer was used in the experiment. The results show that the particle size of Au between citrate sol and the deposited silica/Si substrate can be controlled around 15 nm with good reproductability due to the stable growth mechanism in the fabrication method.

UR - http://www.scopus.com/inward/record.url?scp=1642294681&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1642294681&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:1642294681

VL - 22

SP - 60

EP - 64

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 1

ER -