Formation mechanism and Coulomb blockade effect in self-assembled gold quantum dots

S. F. Hu, R. L. Yeh, R. S. Liu

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The formation mechanism of nanometer-scale quantum dots assembled on SiO2 were studied. Three gold colloidal particles, aligned in a single electron transistor (SET) chain to form a one-dimensional current path, were bridged on an 80 nm gap between the source and drain metal electrodes. The Silica film was thermally grown on a Si substrate and a patterned Si wafer was used in the experiment. The results show that the particle size of Au between citrate sol and the deposited silica/Si substrate can be controlled around 15 nm with good reproductability due to the stable growth mechanism in the fabrication method.

Original languageEnglish
Pages (from-to)60-64
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number1
Publication statusPublished - 2004 Jan 1

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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