Formation and annealing effect for close-packed Ge/Cu(111) layers

J. S. Tsay; L. W. Chang; A. B. Yang

doi:10.1116/1.1615972

Formation and annealing effect for close-packed Ge/Cu(111) layers

J. S. Tsay^*, L. W. Chang, A. B. Yang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Growth and annealing effects in Ge/Cu(111) ultrathin film was deposited at ambient temperature were studied using AES and LEED techniques. LEED observation shows a 1X1 structure of 5 ML Ge/Cu(111) film. The kinetic energy of Cu L₃M₄₅M₄₅ Auger electrons shifts to a lower value upon deposition of Ge overlayers.

Original language	English
Pages (from-to)	1892-1894
Number of pages	3
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	21
Issue number	6
DOIs	https://doi.org/10.1116/1.1615972
Publication status	Published - 2003 Nov
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Formation and annealing effect for close-packed Ge/Cu(111) layers",

abstract = "Growth and annealing effects in Ge/Cu(111) ultrathin film was deposited at ambient temperature were studied using AES and LEED techniques. LEED observation shows a 1X1 structure of 5 ML Ge/Cu(111) film. The kinetic energy of Cu L3M45M45 Auger electrons shifts to a lower value upon deposition of Ge overlayers.",

author = "Tsay, {J. S.} and Chang, {L. W.} and Yang, {A. B.}",

year = "2003",

month = nov,

doi = "10.1116/1.1615972",

language = "English",

volume = "21",

pages = "1892--1894",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "6",

}

TY - JOUR

T1 - Formation and annealing effect for close-packed Ge/Cu(111) layers

AU - Tsay, J. S.

AU - Chang, L. W.

AU - Yang, A. B.

PY - 2003/11

Y1 - 2003/11

N2 - Growth and annealing effects in Ge/Cu(111) ultrathin film was deposited at ambient temperature were studied using AES and LEED techniques. LEED observation shows a 1X1 structure of 5 ML Ge/Cu(111) film. The kinetic energy of Cu L3M45M45 Auger electrons shifts to a lower value upon deposition of Ge overlayers.

AB - Growth and annealing effects in Ge/Cu(111) ultrathin film was deposited at ambient temperature were studied using AES and LEED techniques. LEED observation shows a 1X1 structure of 5 ML Ge/Cu(111) film. The kinetic energy of Cu L3M45M45 Auger electrons shifts to a lower value upon deposition of Ge overlayers.

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U2 - 10.1116/1.1615972

DO - 10.1116/1.1615972

M3 - Article

AN - SCOPUS:0842344414

SN - 0734-2101

VL - 21

SP - 1892

EP - 1894

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 6

ER -

Formation and annealing effect for close-packed Ge/Cu(111) layers

Abstract

ASJC Scopus subject areas

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