Formation and annealing effect for close-packed Ge/Cu(111) layers

Jyh-Shen Tsay, L. W. Chang, A. B. Yang

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3 Citations (Scopus)

Abstract

Growth and annealing effects in Ge/Cu(111) ultrathin film was deposited at ambient temperature were studied using AES and LEED techniques. LEED observation shows a 1X1 structure of 5 ML Ge/Cu(111) film. The kinetic energy of Cu L3M45M45 Auger electrons shifts to a lower value upon deposition of Ge overlayers.

Original languageEnglish
Pages (from-to)1892-1894
Number of pages3
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume21
Issue number6
DOIs
Publication statusPublished - 2003 Nov 1

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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