Flip-chip-assembled W-band CMOS chip modules on ceramic integrated passive device with transition compensation for millimeter-wave system-in-package integration

Hsin Chia Lu, Che Chung Kuo, Po An Lin, Chen Fang Tai, Yi Long Chang, Yu Sian Jiang, Jeng Han Tsai, Yue Ming Hsin, Huei Wang

Research output: Contribution to journalArticle

31 Citations (Scopus)


In this paper, W-band flip-chip-assembled CMOS chip modules with transition compensation are presented, a three-stage amplifier, a balanced amplifier, and a down-converted Gilbert-cell subharmonic mixer are included in the chip set. The flip-chip process on ceramic integrated passive devices (CIPD) with a bump size of 30 μm × 30 μm × 27 μm is developed for millimeter-wave applications. Without the flip-chip transition compensation, the frequency of the return loss of each chip is shifted, which deviates from the bare die measurement results. By applying the compensation network in the transition, the dips of the return loss are tuned back closer to the bare die measurement results. Moreover, a W -band amplifier flip-chip-assembled with a CPW-fed Yagi-Uda antenna on a CIPD and a W -band flip-chip-assembled receiver are presented for SiP integration. The effect of dicing edge variation is also included in the flip-chip model to achieve reasonable agreement between simulated and measured scattering parameters. To the best of our knowledge, this is the first demonstration of a CMOS chip set with flip-chip interconnects in the W-band for a system-in-package.

Original languageEnglish
Article number06129527
Pages (from-to)766-777
Number of pages12
JournalIEEE Transactions on Microwave Theory and Techniques
Issue number3 PART 2
Publication statusPublished - 2012 Mar 1



  • CMOS
  • W-band
  • flip-chip
  • millimeter wave

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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