Flexible InGaZnO thin film transistors using stacked Y2O3/TiO2/Y2O3 gate dielectrics grown at room temperature

Hsiao Hsuan Hsu; Chun Yen Chang; Chun Hu Cheng

doi:10.1002/pssr.201307047

Flexible InGaZnO thin film transistors using stacked Y₂O₃/TiO₂/Y₂O₃ gate dielectrics grown at room temperature

Hsiao Hsuan Hsu, Chun Yen Chang, Chun Hu Cheng^*

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

In this Letter, we report a low operation voltage and high mobility flexible InGaZnO thin-film transistor (TFT) using room-temperature processed Y₂O₃/TiO₂/Y₂O₃ gate dielectric. The flexible IGZO TFT showed a low threshold voltage of 0.75 V, a small sub-threshold swing of 137 mV/decade, a good field effect mobility of 32.7 cm²/V s, and a large I_on/I_off ratio of 1.7 × 10⁶. The low operation voltage, small sub-threshold swing and high mobility could be ascribed to the combination of high-κ TiO₂ and large band gap Y₂O₃, which provide the potential to meet the requirements of low-temperature and low-power portable electronics.

Original language	English
Pages (from-to)	285-288
Number of pages	4
Journal	Physica Status Solidi - Rapid Research Letters
Volume	7
Issue number	4
DOIs	https://doi.org/10.1002/pssr.201307047
Publication status	Published - 2013 Apr

Keywords

InGaZnO
Thin-film transistors
TiO
YO

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

Access to Document

10.1002/pssr.201307047

Cite this

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title = "Flexible InGaZnO thin film transistors using stacked Y2O3/TiO2/Y2O3 gate dielectrics grown at room temperature",

abstract = "In this Letter, we report a low operation voltage and high mobility flexible InGaZnO thin-film transistor (TFT) using room-temperature processed Y2O3/TiO2/Y2O3 gate dielectric. The flexible IGZO TFT showed a low threshold voltage of 0.75 V, a small sub-threshold swing of 137 mV/decade, a good field effect mobility of 32.7 cm2/V s, and a large Ion/Ioff ratio of 1.7 × 106. The low operation voltage, small sub-threshold swing and high mobility could be ascribed to the combination of high-κ TiO2 and large band gap Y2O3, which provide the potential to meet the requirements of low-temperature and low-power portable electronics.",

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AB - In this Letter, we report a low operation voltage and high mobility flexible InGaZnO thin-film transistor (TFT) using room-temperature processed Y2O3/TiO2/Y2O3 gate dielectric. The flexible IGZO TFT showed a low threshold voltage of 0.75 V, a small sub-threshold swing of 137 mV/decade, a good field effect mobility of 32.7 cm2/V s, and a large Ion/Ioff ratio of 1.7 × 106. The low operation voltage, small sub-threshold swing and high mobility could be ascribed to the combination of high-κ TiO2 and large band gap Y2O3, which provide the potential to meet the requirements of low-temperature and low-power portable electronics.

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