Flexible InGaZnO thin film transistors using stacked Y2O3/TiO2/Y2O3 gate dielectrics grown at room temperature

Hsiao Hsuan Hsu, Chun Yen Chang, Chun-Hu Cheng

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

In this Letter, we report a low operation voltage and high mobility flexible InGaZnO thin-film transistor (TFT) using room-temperature processed Y2O3/TiO2/Y2O3 gate dielectric. The flexible IGZO TFT showed a low threshold voltage of 0.75 V, a small sub-threshold swing of 137 mV/decade, a good field effect mobility of 32.7 cm2/V s, and a large Ion/Ioff ratio of 1.7 × 106. The low operation voltage, small sub-threshold swing and high mobility could be ascribed to the combination of high-κ TiO2 and large band gap Y2O3, which provide the potential to meet the requirements of low-temperature and low-power portable electronics.

Original languageEnglish
Pages (from-to)285-288
Number of pages4
JournalPhysica Status Solidi - Rapid Research Letters
Volume7
Issue number4
DOIs
Publication statusPublished - 2013 Apr 1

Fingerprint

Gate dielectrics
Thin film transistors
transistors
Electric potential
room temperature
thin films
Heavy ions
Threshold voltage
Energy gap
Electronic equipment
thresholds
electric potential
threshold voltage
Temperature
low voltage
requirements
electronics
ions

Keywords

  • InGaZnO
  • Thin-film transistors
  • TiO
  • YO

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Flexible InGaZnO thin film transistors using stacked Y2O3/TiO2/Y2O3 gate dielectrics grown at room temperature. / Hsu, Hsiao Hsuan; Chang, Chun Yen; Cheng, Chun-Hu.

In: Physica Status Solidi - Rapid Research Letters, Vol. 7, No. 4, 01.04.2013, p. 285-288.

Research output: Contribution to journalArticle

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