Flexible InGaZnO TFTs with stacked GeO2/TiO2 gate dielectrics

Hsiao Hsuan Hsu; Chun Yen Chang; Chun Hu Cheng; Shu Hung Yu; Ching Yuan Su

doi:10.1109/EDSSC.2013.6628218

Flexible InGaZnO TFTs with stacked GeO₂/TiO₂ gate dielectrics

Hsiao Hsuan Hsu, Chun Yen Chang, Chun Hu Cheng, Shu Hung Yu, Ching Yuan Su

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We reported an amorphous InGaZnO thin-film transistor using stacked gate dielectrics of GeO₂/TiO₂ on flexible polycarbonate substrate. The flexible TFT showed a low threshold voltage of 2.2 V, small sub-threshold swing of 256 mV/decade, an field effect mobility of 4 cm ²/Vs, and a good I_on/I_off ratio of 3.7×10⁵. The flexible TFT with low operation voltage and high drive current could be attributed to the combined effect of flat plastic substrate, large band-gap GeO₂ and higher-K TiO₂.

Original language	English
Title of host publication	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs	https://doi.org/10.1109/EDSSC.2013.6628218
Publication status	Published - 2013
Event	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, Hong Kong Duration: 2013 Jun 3 → 2013 Jun 5

Publication series

Name	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

Other

Other	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
Country/Territory	Hong Kong
City	Hong Kong
Period	2013/06/03 → 2013/06/05

Keywords

GeO
TiO
flexible
thin film transistor (TFT)

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EDSSC.2013.6628218

Cite this

Hsu, H. H., Chang, C. Y., Cheng, C. H., Yu, S. H., & Su, C. Y. (2013). Flexible InGaZnO TFTs with stacked GeO₂/TiO₂ gate dielectrics. In 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 Article 6628218 (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013). https://doi.org/10.1109/EDSSC.2013.6628218

Flexible InGaZnO TFTs with stacked GeO₂/TiO₂ gate dielectrics. / Hsu, Hsiao Hsuan; Chang, Chun Yen; Cheng, Chun Hu et al.
2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013. 6628218 (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hsu, HH, Chang, CY, Cheng, CH, Yu, SH & Su, CY 2013, Flexible InGaZnO TFTs with stacked GeO₂/TiO₂ gate dielectrics. in 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013., 6628218, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, Hong Kong, Hong Kong, 2013/06/03. https://doi.org/10.1109/EDSSC.2013.6628218

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abstract = "We reported an amorphous InGaZnO thin-film transistor using stacked gate dielectrics of GeO2/TiO2 on flexible polycarbonate substrate. The flexible TFT showed a low threshold voltage of 2.2 V, small sub-threshold swing of 256 mV/decade, an field effect mobility of 4 cm 2/Vs, and a good Ion/Ioff ratio of 3.7×105. The flexible TFT with low operation voltage and high drive current could be attributed to the combined effect of flat plastic substrate, large band-gap GeO2 and higher-K TiO2.",

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