Flexible InGaZnO TFTs with stacked GeO2/TiO2 gate dielectrics

Hsiao Hsuan Hsu, Chun Yen Chang, Chun Hu Cheng, Shu Hung Yu, Ching Yuan Su

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We reported an amorphous InGaZnO thin-film transistor using stacked gate dielectrics of GeO2/TiO2 on flexible polycarbonate substrate. The flexible TFT showed a low threshold voltage of 2.2 V, small sub-threshold swing of 256 mV/decade, an field effect mobility of 4 cm 2/Vs, and a good Ion/Ioff ratio of 3.7×105. The flexible TFT with low operation voltage and high drive current could be attributed to the combined effect of flat plastic substrate, large band-gap GeO2 and higher-K TiO2.

Original languageEnglish
Title of host publication2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs
Publication statusPublished - 2013 Dec 23
Event2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, Hong Kong
Duration: 2013 Jun 32013 Jun 5

Other

Other2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
CountryHong Kong
CityHong Kong
Period13/6/313/6/5

Keywords

  • flexible
  • GeO
  • thin film transistor (TFT)
  • TiO

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Hsu, H. H., Chang, C. Y., Cheng, C. H., Yu, S. H., & Su, C. Y. (2013). Flexible InGaZnO TFTs with stacked GeO2/TiO2 gate dielectrics. In 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 [6628218] https://doi.org/10.1109/EDSSC.2013.6628218