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First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles
Yu Rui Chen*, Yi Chun Liu, Zefu Zhao, Wan Hsuan Hsieh, Jia Yang Lee, Chien Te Tu, Bo Wei Huang, Jer Fu Wang, Shee Jier Chueh, Yifan Xing, Guan Hua Chen, Hung Chun Chou, Dong Soo Woo, M. H. Lee, C. W. Liu*
*Corresponding author for this work
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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(Scopus)