First demonstration of flash RRAM on pure CMOS logic 14nm FinFET platform featuring excellent immunity to sneak-path and MLC capability

E. R. Hsieh; Y. C. Kuo; C. H. Cheng; J. L. Kuo; M. R. Jiang; J. L. Lin; H. W. Cheng; Steve S. Chung; C. H. Liu; T. P. Chen; Y. H. Yeah; T. J. Chen; Osbert Cheng

doi:10.23919/VLSIT.2017.7998204

First demonstration of flash RRAM on pure CMOS logic 14nm FinFET platform featuring excellent immunity to sneak-path and MLC capability

E. R. Hsieh, Y. C. Kuo, C. H. Cheng, J. L. Kuo, M. R. Jiang, J. L. Lin, H. W. Cheng, Steve S. Chung, C. H. Liu, T. P. Chen, Y. H. Yeah, T. J. Chen, Osbert Cheng

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

For the first time, the ion-vacancy-based bipolar RRAM has been demonstrated on HKMG stack of FEOL logic 14nm FinFET. A unit cell with two identical FinFETs, one serves as a control transistor and the other one is the storage with resistance switching. It is performed by the edge tunneling and with bipolar switching. More importantly, the sneak path issue in an AND-type array based on this FinFET unit cell has been thoroughly investigated. To solve sneak path issue, a new active-fin-isolation (AFI) of FinFET in an AND-type array was proposed. This new AFI effectively increases the S/N margin of 10³ and significantly reduces the standby power of 30% and active power of 99%, compared to original AND-type array. This work provides a promising candidate for the embedded FLASH memory on FinFET platform featuring fully-CMOS compatible integration and low cost solution in the more-than-Moore era.

Original language	English
Title of host publication	2017 Symposium on VLSI Technology, VLSI Technology 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	T72-T73
ISBN (Electronic)	9784863486058
DOIs	https://doi.org/10.23919/VLSIT.2017.7998204
Publication status	Published - 2017 Jul 31
Externally published	Yes
Event	37th Symposium on VLSI Technology, VLSI Technology 2017 - Kyoto, Japan Duration: 2017 Jun 5 → 2017 Jun 8

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Conference

Conference	37th Symposium on VLSI Technology, VLSI Technology 2017
Country/Territory	Japan
City	Kyoto
Period	2017/06/05 → 2017/06/08

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.23919/VLSIT.2017.7998204

Cite this

Hsieh, E. R., Kuo, Y. C., Cheng, C. H., Kuo, J. L., Jiang, M. R., Lin, J. L., Cheng, H. W., Chung, S. S., Liu, C. H., Chen, T. P., Yeah, Y. H., Chen, T. J., & Cheng, O. (2017). First demonstration of flash RRAM on pure CMOS logic 14nm FinFET platform featuring excellent immunity to sneak-path and MLC capability. In 2017 Symposium on VLSI Technology, VLSI Technology 2017 (pp. T72-T73). Article 7998204 (Digest of Technical Papers - Symposium on VLSI Technology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/VLSIT.2017.7998204

First demonstration of flash RRAM on pure CMOS logic 14nm FinFET platform featuring excellent immunity to sneak-path and MLC capability. / Hsieh, E. R.; Kuo, Y. C.; Cheng, C. H. et al.
2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. T72-T73 7998204 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hsieh, ER, Kuo, YC, Cheng, CH, Kuo, JL, Jiang, MR, Lin, JL, Cheng, HW, Chung, SS, Liu, CH, Chen, TP, Yeah, YH, Chen, TJ & Cheng, O 2017, First demonstration of flash RRAM on pure CMOS logic 14nm FinFET platform featuring excellent immunity to sneak-path and MLC capability. in 2017 Symposium on VLSI Technology, VLSI Technology 2017., 7998204, Digest of Technical Papers - Symposium on VLSI Technology, Institute of Electrical and Electronics Engineers Inc., pp. T72-T73, 37th Symposium on VLSI Technology, VLSI Technology 2017, Kyoto, Japan, 2017/06/05. https://doi.org/10.23919/VLSIT.2017.7998204

Hsieh ER, Kuo YC, Cheng CH, Kuo JL, Jiang MR, Lin JL et al. First demonstration of flash RRAM on pure CMOS logic 14nm FinFET platform featuring excellent immunity to sneak-path and MLC capability. In 2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. T72-T73. 7998204. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.23919/VLSIT.2017.7998204

Hsieh, E. R. ; Kuo, Y. C. ; Cheng, C. H. et al. / First demonstration of flash RRAM on pure CMOS logic 14nm FinFET platform featuring excellent immunity to sneak-path and MLC capability. 2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. T72-T73 (Digest of Technical Papers - Symposium on VLSI Technology).

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abstract = "For the first time, the ion-vacancy-based bipolar RRAM has been demonstrated on HKMG stack of FEOL logic 14nm FinFET. A unit cell with two identical FinFETs, one serves as a control transistor and the other one is the storage with resistance switching. It is performed by the edge tunneling and with bipolar switching. More importantly, the sneak path issue in an AND-type array based on this FinFET unit cell has been thoroughly investigated. To solve sneak path issue, a new active-fin-isolation (AFI) of FinFET in an AND-type array was proposed. This new AFI effectively increases the S/N margin of 103 and significantly reduces the standby power of 30% and active power of 99%, compared to original AND-type array. This work provides a promising candidate for the embedded FLASH memory on FinFET platform featuring fully-CMOS compatible integration and low cost solution in the more-than-Moore era.",

author = "Hsieh, {E. R.} and Kuo, {Y. C.} and Cheng, {C. H.} and Kuo, {J. L.} and Jiang, {M. R.} and Lin, {J. L.} and Cheng, {H. W.} and Chung, {Steve S.} and Liu, {C. H.} and Chen, {T. P.} and Yeah, {Y. H.} and Chen, {T. J.} and Osbert Cheng",

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AU - Hsieh, E. R.

AU - Kuo, Y. C.

AU - Cheng, C. H.

AU - Kuo, J. L.

AU - Jiang, M. R.

AU - Lin, J. L.

AU - Cheng, H. W.

AU - Chung, Steve S.

AU - Liu, C. H.

AU - Chen, T. P.

AU - Yeah, Y. H.

AU - Chen, T. J.

AU - Cheng, Osbert

PY - 2017/7/31

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N2 - For the first time, the ion-vacancy-based bipolar RRAM has been demonstrated on HKMG stack of FEOL logic 14nm FinFET. A unit cell with two identical FinFETs, one serves as a control transistor and the other one is the storage with resistance switching. It is performed by the edge tunneling and with bipolar switching. More importantly, the sneak path issue in an AND-type array based on this FinFET unit cell has been thoroughly investigated. To solve sneak path issue, a new active-fin-isolation (AFI) of FinFET in an AND-type array was proposed. This new AFI effectively increases the S/N margin of 103 and significantly reduces the standby power of 30% and active power of 99%, compared to original AND-type array. This work provides a promising candidate for the embedded FLASH memory on FinFET platform featuring fully-CMOS compatible integration and low cost solution in the more-than-Moore era.

AB - For the first time, the ion-vacancy-based bipolar RRAM has been demonstrated on HKMG stack of FEOL logic 14nm FinFET. A unit cell with two identical FinFETs, one serves as a control transistor and the other one is the storage with resistance switching. It is performed by the edge tunneling and with bipolar switching. More importantly, the sneak path issue in an AND-type array based on this FinFET unit cell has been thoroughly investigated. To solve sneak path issue, a new active-fin-isolation (AFI) of FinFET in an AND-type array was proposed. This new AFI effectively increases the S/N margin of 103 and significantly reduces the standby power of 30% and active power of 99%, compared to original AND-type array. This work provides a promising candidate for the embedded FLASH memory on FinFET platform featuring fully-CMOS compatible integration and low cost solution in the more-than-Moore era.

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First demonstration of flash RRAM on pure CMOS logic 14nm FinFET platform featuring excellent immunity to sneak-path and MLC capability

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