Abstract
This research studies diamond-like carbon (DLC) films doped with both boron and nitrogen prepared by microwave plasma enhanced chemical vapor deposition (MPECVD). The as-prepared samples with various doping of boron and nitrogen species were characterized using a Raman spectroscopic technique, and the electron field emission of the films was measured. The electron field emission properties of the as-deposited samples at fixed nitrogen doping vary with boron content significantly. The results infer that only when proper dopants are incorporated, the electron conduction in the DLC films is improved and the electron emission is enhanced. From the analysis of Raman spectra, it is found that the field emission depends on the relative intensities of D- and G-bands as well as the D*-band (~ 1150 cm -1) and G*-band (~ 1500 cm -1) that co-exist in the films. Post-production modification of the as-deposited samples via thermal annealing and annealing with atomic hydrogen etching were also conducted in an effort to understand the electron field emission mechanism.
| Original language | English |
|---|---|
| Pages (from-to) | 804-808 |
| Number of pages | 5 |
| Journal | Diamond and Related Materials |
| Volume | 11 |
| Issue number | 3-6 |
| DOIs | |
| Publication status | Published - 2002 Mar 1 |
Fingerprint
Keywords
- Diamond-like carbon
- Field emission
- Hydrogen etching
- Raman spectroscopy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Chemistry(all)
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering
Cite this
Field emission and Raman spectroscopy studies of atomic hydrogen etching on boron and nitrogen doped DLC films. / Wu, Y. H.; Hsu, C. M.; Chia, C. T.; Lin, I. N.; Cheng, C. L.
In: Diamond and Related Materials, Vol. 11, No. 3-6, 01.03.2002, p. 804-808.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Field emission and Raman spectroscopy studies of atomic hydrogen etching on boron and nitrogen doped DLC films
AU - Wu, Y. H.
AU - Hsu, C. M.
AU - Chia, C. T.
AU - Lin, I. N.
AU - Cheng, C. L.
PY - 2002/3/1
Y1 - 2002/3/1
N2 - This research studies diamond-like carbon (DLC) films doped with both boron and nitrogen prepared by microwave plasma enhanced chemical vapor deposition (MPECVD). The as-prepared samples with various doping of boron and nitrogen species were characterized using a Raman spectroscopic technique, and the electron field emission of the films was measured. The electron field emission properties of the as-deposited samples at fixed nitrogen doping vary with boron content significantly. The results infer that only when proper dopants are incorporated, the electron conduction in the DLC films is improved and the electron emission is enhanced. From the analysis of Raman spectra, it is found that the field emission depends on the relative intensities of D- and G-bands as well as the D*-band (~ 1150 cm -1) and G*-band (~ 1500 cm -1) that co-exist in the films. Post-production modification of the as-deposited samples via thermal annealing and annealing with atomic hydrogen etching were also conducted in an effort to understand the electron field emission mechanism.
AB - This research studies diamond-like carbon (DLC) films doped with both boron and nitrogen prepared by microwave plasma enhanced chemical vapor deposition (MPECVD). The as-prepared samples with various doping of boron and nitrogen species were characterized using a Raman spectroscopic technique, and the electron field emission of the films was measured. The electron field emission properties of the as-deposited samples at fixed nitrogen doping vary with boron content significantly. The results infer that only when proper dopants are incorporated, the electron conduction in the DLC films is improved and the electron emission is enhanced. From the analysis of Raman spectra, it is found that the field emission depends on the relative intensities of D- and G-bands as well as the D*-band (~ 1150 cm -1) and G*-band (~ 1500 cm -1) that co-exist in the films. Post-production modification of the as-deposited samples via thermal annealing and annealing with atomic hydrogen etching were also conducted in an effort to understand the electron field emission mechanism.
KW - Diamond-like carbon
KW - Field emission
KW - Hydrogen etching
KW - Raman spectroscopy
UR - http://www.scopus.com/inward/record.url?scp=0036508063&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036508063&partnerID=8YFLogxK
U2 - 10.1016/S0925-9635(01)00696-3
DO - 10.1016/S0925-9635(01)00696-3
M3 - Article
AN - SCOPUS:0036508063
VL - 11
SP - 804
EP - 808
JO - Diamond and Related Materials
JF - Diamond and Related Materials
SN - 0925-9635
IS - 3-6
ER -