Field emission and Raman spectroscopy studies of atomic hydrogen etching on boron and nitrogen doped DLC films

Y. H. Wu, C. M. Hsu, C. T. Chia, I. N. Lin, C. L. Cheng

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

This research studies diamond-like carbon (DLC) films doped with both boron and nitrogen prepared by microwave plasma enhanced chemical vapor deposition (MPECVD). The as-prepared samples with various doping of boron and nitrogen species were characterized using a Raman spectroscopic technique, and the electron field emission of the films was measured. The electron field emission properties of the as-deposited samples at fixed nitrogen doping vary with boron content significantly. The results infer that only when proper dopants are incorporated, the electron conduction in the DLC films is improved and the electron emission is enhanced. From the analysis of Raman spectra, it is found that the field emission depends on the relative intensities of D- and G-bands as well as the D*-band (~ 1150 cm -1) and G*-band (~ 1500 cm -1) that co-exist in the films. Post-production modification of the as-deposited samples via thermal annealing and annealing with atomic hydrogen etching were also conducted in an effort to understand the electron field emission mechanism.

Original languageEnglish
Pages (from-to)804-808
Number of pages5
JournalDiamond and Related Materials
Volume11
Issue number3-6
DOIs
Publication statusPublished - 2002 Mar 1

Fingerprint

Diamond like carbon films
Boron
Emission spectroscopy
Field emission
electron emission
Raman spectroscopy
field emission
Hydrogen
Etching
boron
Nitrogen
diamonds
etching
nitrogen
Electrons
carbon
Doping (additives)
hydrogen
spectroscopy
Annealing

Keywords

  • Diamond-like carbon
  • Field emission
  • Hydrogen etching
  • Raman spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Field emission and Raman spectroscopy studies of atomic hydrogen etching on boron and nitrogen doped DLC films. / Wu, Y. H.; Hsu, C. M.; Chia, C. T.; Lin, I. N.; Cheng, C. L.

In: Diamond and Related Materials, Vol. 11, No. 3-6, 01.03.2002, p. 804-808.

Research output: Contribution to journalArticle

@article{a8dfacf263b34291a966ec833ad4623e,
title = "Field emission and Raman spectroscopy studies of atomic hydrogen etching on boron and nitrogen doped DLC films",
abstract = "This research studies diamond-like carbon (DLC) films doped with both boron and nitrogen prepared by microwave plasma enhanced chemical vapor deposition (MPECVD). The as-prepared samples with various doping of boron and nitrogen species were characterized using a Raman spectroscopic technique, and the electron field emission of the films was measured. The electron field emission properties of the as-deposited samples at fixed nitrogen doping vary with boron content significantly. The results infer that only when proper dopants are incorporated, the electron conduction in the DLC films is improved and the electron emission is enhanced. From the analysis of Raman spectra, it is found that the field emission depends on the relative intensities of D- and G-bands as well as the D*-band (~ 1150 cm -1) and G*-band (~ 1500 cm -1) that co-exist in the films. Post-production modification of the as-deposited samples via thermal annealing and annealing with atomic hydrogen etching were also conducted in an effort to understand the electron field emission mechanism.",
keywords = "Diamond-like carbon, Field emission, Hydrogen etching, Raman spectroscopy",
author = "Wu, {Y. H.} and Hsu, {C. M.} and Chia, {C. T.} and Lin, {I. N.} and Cheng, {C. L.}",
year = "2002",
month = "3",
day = "1",
doi = "10.1016/S0925-9635(01)00696-3",
language = "English",
volume = "11",
pages = "804--808",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier BV",
number = "3-6",

}

TY - JOUR

T1 - Field emission and Raman spectroscopy studies of atomic hydrogen etching on boron and nitrogen doped DLC films

AU - Wu, Y. H.

AU - Hsu, C. M.

AU - Chia, C. T.

AU - Lin, I. N.

AU - Cheng, C. L.

PY - 2002/3/1

Y1 - 2002/3/1

N2 - This research studies diamond-like carbon (DLC) films doped with both boron and nitrogen prepared by microwave plasma enhanced chemical vapor deposition (MPECVD). The as-prepared samples with various doping of boron and nitrogen species were characterized using a Raman spectroscopic technique, and the electron field emission of the films was measured. The electron field emission properties of the as-deposited samples at fixed nitrogen doping vary with boron content significantly. The results infer that only when proper dopants are incorporated, the electron conduction in the DLC films is improved and the electron emission is enhanced. From the analysis of Raman spectra, it is found that the field emission depends on the relative intensities of D- and G-bands as well as the D*-band (~ 1150 cm -1) and G*-band (~ 1500 cm -1) that co-exist in the films. Post-production modification of the as-deposited samples via thermal annealing and annealing with atomic hydrogen etching were also conducted in an effort to understand the electron field emission mechanism.

AB - This research studies diamond-like carbon (DLC) films doped with both boron and nitrogen prepared by microwave plasma enhanced chemical vapor deposition (MPECVD). The as-prepared samples with various doping of boron and nitrogen species were characterized using a Raman spectroscopic technique, and the electron field emission of the films was measured. The electron field emission properties of the as-deposited samples at fixed nitrogen doping vary with boron content significantly. The results infer that only when proper dopants are incorporated, the electron conduction in the DLC films is improved and the electron emission is enhanced. From the analysis of Raman spectra, it is found that the field emission depends on the relative intensities of D- and G-bands as well as the D*-band (~ 1150 cm -1) and G*-band (~ 1500 cm -1) that co-exist in the films. Post-production modification of the as-deposited samples via thermal annealing and annealing with atomic hydrogen etching were also conducted in an effort to understand the electron field emission mechanism.

KW - Diamond-like carbon

KW - Field emission

KW - Hydrogen etching

KW - Raman spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=0036508063&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036508063&partnerID=8YFLogxK

U2 - 10.1016/S0925-9635(01)00696-3

DO - 10.1016/S0925-9635(01)00696-3

M3 - Article

AN - SCOPUS:0036508063

VL - 11

SP - 804

EP - 808

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 3-6

ER -