Ferroelectricity of HfZrO2 in energy landscape with surface potential gain for low-power steep-slope transistors

Min Hung Lee; Y. T. Wei; C. Liu; J. J. Huang; Ming Tang; Yu Lun Chueh; K. Y. Chu; Miin Jang Chen; Heng Yuan Lee; Yu Sheng Chen; Li Heng Lee; Ming Jinn Tsai

doi:10.1109/JEDS.2015.2435492

Ferroelectricity of HfZrO₂ in energy landscape with surface potential gain for low-power steep-slope transistors

Min Hung Lee^*
, Y. T. Wei
, C. Liu
, J. J. Huang
, Ming Tang
, Yu Lun Chueh
, K. Y. Chu
, Miin Jang Chen
, Heng Yuan Lee
, Yu Sheng Chen
, Li Heng Lee
, Ming Jinn Tsai

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

65 Citations (Scopus)

Abstract

The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO₂ (HZO) for low-power steep-slope transistor applications. The anti-ferroelectric (AFE) in annealed 600°C HZO extracted electrostatic potential gain from the measured polarization hysteresis loop and calculated subthreshold swing 33 mV/dec over six decades of IDS. A feasible concept of coupling the AFE HZO is experimentally established with the validity of negative capacitance and beneficial for steep-slope FET development in future generation.

Original language	English
Article number	7110513
Pages (from-to)	377-381
Number of pages	5
Journal	IEEE Journal of the Electron Devices Society
Volume	3
Issue number	4
DOIs	https://doi.org/10.1109/JEDS.2015.2435492
Publication status	Published - 2015 Jul 1

Keywords

ferroelectric
negative capacitance
subthreshold swing

ASJC Scopus subject areas

Biotechnology
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/JEDS.2015.2435492

Cite this

Lee, M. H., Wei, Y. T., Liu, C., Huang, J. J., Tang, M., Chueh, Y. L., Chu, K. Y., Chen, M. J., Lee, H. Y., Chen, Y. S., Lee, L. H., & Tsai, M. J. (2015). Ferroelectricity of HfZrO₂ in energy landscape with surface potential gain for low-power steep-slope transistors. IEEE Journal of the Electron Devices Society, 3(4), 377-381. Article 7110513. https://doi.org/10.1109/JEDS.2015.2435492

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abstract = "The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO2 (HZO) for low-power steep-slope transistor applications. The anti-ferroelectric (AFE) in annealed 600°C HZO extracted electrostatic potential gain from the measured polarization hysteresis loop and calculated subthreshold swing 33 mV/dec over six decades of IDS. A feasible concept of coupling the AFE HZO is experimentally established with the validity of negative capacitance and beneficial for steep-slope FET development in future generation.",

keywords = "ferroelectric, negative capacitance, subthreshold swing",

author = "Lee, \{Min Hung\} and Wei, \{Y. T.\} and C. Liu and Huang, \{J. J.\} and Ming Tang and Chueh, \{Yu Lun\} and Chu, \{K. Y.\} and Chen, \{Miin Jang\} and Lee, \{Heng Yuan\} and Chen, \{Yu Sheng\} and Lee, \{Li Heng\} and Tsai, \{Ming Jinn\}",

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AU - Lee, Min Hung

AU - Wei, Y. T.

AU - Liu, C.

AU - Huang, J. J.

AU - Tang, Ming

AU - Chueh, Yu Lun

AU - Chu, K. Y.

AU - Chen, Miin Jang

AU - Lee, Heng Yuan

AU - Chen, Yu Sheng

AU - Lee, Li Heng

AU - Tsai, Ming Jinn

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N2 - The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO2 (HZO) for low-power steep-slope transistor applications. The anti-ferroelectric (AFE) in annealed 600°C HZO extracted electrostatic potential gain from the measured polarization hysteresis loop and calculated subthreshold swing 33 mV/dec over six decades of IDS. A feasible concept of coupling the AFE HZO is experimentally established with the validity of negative capacitance and beneficial for steep-slope FET development in future generation.

AB - The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO2 (HZO) for low-power steep-slope transistor applications. The anti-ferroelectric (AFE) in annealed 600°C HZO extracted electrostatic potential gain from the measured polarization hysteresis loop and calculated subthreshold swing 33 mV/dec over six decades of IDS. A feasible concept of coupling the AFE HZO is experimentally established with the validity of negative capacitance and beneficial for steep-slope FET development in future generation.

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KW - negative capacitance

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