Ferroelectricity of HfZrO2 in energy landscape with surface potential gain for low-power steep-slope transistors

Min Hung Lee*, Y. T. Wei, C. Liu, J. J. Huang, Ming Tang, Yu Lun Chueh, K. Y. Chu, Miin Jang Chen, Heng Yuan Lee, Yu Sheng Chen, Li Heng Lee, Ming Jinn Tsai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

49 Citations (Scopus)

Abstract

The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO2 (HZO) for low-power steep-slope transistor applications. The anti-ferroelectric (AFE) in annealed 600°C HZO extracted electrostatic potential gain from the measured polarization hysteresis loop and calculated subthreshold swing 33 mV/dec over six decades of IDS. A feasible concept of coupling the AFE HZO is experimentally established with the validity of negative capacitance and beneficial for steep-slope FET development in future generation.

Original languageEnglish
Article number7110513
Pages (from-to)377-381
Number of pages5
JournalIEEE Journal of the Electron Devices Society
Volume3
Issue number4
DOIs
Publication statusPublished - 2015 Jul 1

Keywords

  • ferroelectric
  • negative capacitance
  • subthreshold swing

ASJC Scopus subject areas

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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