Ferroelectricity of HfZrO2 in energy landscape with surface potential gain for low-power steep-slope transistors

Min Hung Lee, Y. T. Wei, C. Liu, J. J. Huang, Ming Tang, Yu Lun Chueh, K. Y. Chu, Miin Jang Chen, Heng Yuan Lee, Yu Sheng Chen, Li Heng Lee, Ming Jinn Tsai

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO2 (HZO) for low-power steep-slope transistor applications. The anti-ferroelectric (AFE) in annealed 600°C HZO extracted electrostatic potential gain from the measured polarization hysteresis loop and calculated subthreshold swing 33 mV/dec over six decades of IDS. A feasible concept of coupling the AFE HZO is experimentally established with the validity of negative capacitance and beneficial for steep-slope FET development in future generation.

Original languageEnglish
Article number7110513
Pages (from-to)377-381
Number of pages5
JournalIEEE Journal of the Electron Devices Society
Volume3
Issue number4
DOIs
Publication statusPublished - 2015 Jul 1

Keywords

  • ferroelectric
  • negative capacitance
  • subthreshold swing

ASJC Scopus subject areas

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Lee, M. H., Wei, Y. T., Liu, C., Huang, J. J., Tang, M., Chueh, Y. L., Chu, K. Y., Chen, M. J., Lee, H. Y., Chen, Y. S., Lee, L. H., & Tsai, M. J. (2015). Ferroelectricity of HfZrO2 in energy landscape with surface potential gain for low-power steep-slope transistors. IEEE Journal of the Electron Devices Society, 3(4), 377-381. [7110513]. https://doi.org/10.1109/JEDS.2015.2435492