Ferroelectricity of HfZrO2 in energy landscape with surface potential gain for low-power steep-slope transistors

Min-Hung Lee, Y. T. Wei, C. Liu, J. J. Huang, Ming Tang, Yu Lun Chueh, K. Y. Chu, Miin Jang Chen, Heng Yuan Lee, Yu Sheng Chen, Li Heng Lee, Ming Jinn Tsai

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO2 (HZO) for low-power steep-slope transistor applications. The anti-ferroelectric (AFE) in annealed 600°C HZO extracted electrostatic potential gain from the measured polarization hysteresis loop and calculated subthreshold swing 33 mV/dec over six decades of IDS. A feasible concept of coupling the AFE HZO is experimentally established with the validity of negative capacitance and beneficial for steep-slope FET development in future generation.

Original languageEnglish
Article number7110513
Pages (from-to)377-381
Number of pages5
JournalIEEE Journal of the Electron Devices Society
Volume3
Issue number4
DOIs
Publication statusPublished - 2015 Jul 1

Fingerprint

Ferroelectricity
Social Responsibility
Surface potential
Static Electricity
Ferroelectric materials
Transistors
Hysteresis loops
Field effect transistors
Electrostatics
Capacitance
Polarization

Keywords

  • ferroelectric
  • negative capacitance
  • subthreshold swing

ASJC Scopus subject areas

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Ferroelectricity of HfZrO2 in energy landscape with surface potential gain for low-power steep-slope transistors. / Lee, Min-Hung; Wei, Y. T.; Liu, C.; Huang, J. J.; Tang, Ming; Chueh, Yu Lun; Chu, K. Y.; Chen, Miin Jang; Lee, Heng Yuan; Chen, Yu Sheng; Lee, Li Heng; Tsai, Ming Jinn.

In: IEEE Journal of the Electron Devices Society, Vol. 3, No. 4, 7110513, 01.07.2015, p. 377-381.

Research output: Contribution to journalArticle

Lee, M-H, Wei, YT, Liu, C, Huang, JJ, Tang, M, Chueh, YL, Chu, KY, Chen, MJ, Lee, HY, Chen, YS, Lee, LH & Tsai, MJ 2015, 'Ferroelectricity of HfZrO2 in energy landscape with surface potential gain for low-power steep-slope transistors', IEEE Journal of the Electron Devices Society, vol. 3, no. 4, 7110513, pp. 377-381. https://doi.org/10.1109/JEDS.2015.2435492
Lee, Min-Hung ; Wei, Y. T. ; Liu, C. ; Huang, J. J. ; Tang, Ming ; Chueh, Yu Lun ; Chu, K. Y. ; Chen, Miin Jang ; Lee, Heng Yuan ; Chen, Yu Sheng ; Lee, Li Heng ; Tsai, Ming Jinn. / Ferroelectricity of HfZrO2 in energy landscape with surface potential gain for low-power steep-slope transistors. In: IEEE Journal of the Electron Devices Society. 2015 ; Vol. 3, No. 4. pp. 377-381.
@article{18bcf2cf2a9644ea93aaba0b840502b2,
title = "Ferroelectricity of HfZrO2 in energy landscape with surface potential gain for low-power steep-slope transistors",
abstract = "The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO2 (HZO) for low-power steep-slope transistor applications. The anti-ferroelectric (AFE) in annealed 600°C HZO extracted electrostatic potential gain from the measured polarization hysteresis loop and calculated subthreshold swing 33 mV/dec over six decades of IDS. A feasible concept of coupling the AFE HZO is experimentally established with the validity of negative capacitance and beneficial for steep-slope FET development in future generation.",
keywords = "ferroelectric, negative capacitance, subthreshold swing",
author = "Min-Hung Lee and Wei, {Y. T.} and C. Liu and Huang, {J. J.} and Ming Tang and Chueh, {Yu Lun} and Chu, {K. Y.} and Chen, {Miin Jang} and Lee, {Heng Yuan} and Chen, {Yu Sheng} and Lee, {Li Heng} and Tsai, {Ming Jinn}",
year = "2015",
month = "7",
day = "1",
doi = "10.1109/JEDS.2015.2435492",
language = "English",
volume = "3",
pages = "377--381",
journal = "IEEE Journal of the Electron Devices Society",
issn = "2168-6734",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",

}

TY - JOUR

T1 - Ferroelectricity of HfZrO2 in energy landscape with surface potential gain for low-power steep-slope transistors

AU - Lee, Min-Hung

AU - Wei, Y. T.

AU - Liu, C.

AU - Huang, J. J.

AU - Tang, Ming

AU - Chueh, Yu Lun

AU - Chu, K. Y.

AU - Chen, Miin Jang

AU - Lee, Heng Yuan

AU - Chen, Yu Sheng

AU - Lee, Li Heng

AU - Tsai, Ming Jinn

PY - 2015/7/1

Y1 - 2015/7/1

N2 - The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO2 (HZO) for low-power steep-slope transistor applications. The anti-ferroelectric (AFE) in annealed 600°C HZO extracted electrostatic potential gain from the measured polarization hysteresis loop and calculated subthreshold swing 33 mV/dec over six decades of IDS. A feasible concept of coupling the AFE HZO is experimentally established with the validity of negative capacitance and beneficial for steep-slope FET development in future generation.

AB - The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO2 (HZO) for low-power steep-slope transistor applications. The anti-ferroelectric (AFE) in annealed 600°C HZO extracted electrostatic potential gain from the measured polarization hysteresis loop and calculated subthreshold swing 33 mV/dec over six decades of IDS. A feasible concept of coupling the AFE HZO is experimentally established with the validity of negative capacitance and beneficial for steep-slope FET development in future generation.

KW - ferroelectric

KW - negative capacitance

KW - subthreshold swing

UR - http://www.scopus.com/inward/record.url?scp=84933522232&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84933522232&partnerID=8YFLogxK

U2 - 10.1109/JEDS.2015.2435492

DO - 10.1109/JEDS.2015.2435492

M3 - Article

AN - SCOPUS:84933522232

VL - 3

SP - 377

EP - 381

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

SN - 2168-6734

IS - 4

M1 - 7110513

ER -