Ferroelectricity and Oxide Reliability of Stacked Hafnium–Zirconium Oxide Devices

Ruo Yin Liao; Hsuan Han Chen; Ping Yu Lin; Ting An Liang; Kuan Hung Su; I. Cheng Lin; Chen Hao Wen; Wu Ching Chou; Hsiao Hsuan Hsu; Chun Hu Cheng

doi:10.3390/ma16093306

Ferroelectricity and Oxide Reliability of Stacked Hafnium–Zirconium Oxide Devices

Ruo Yin Liao, Hsuan Han Chen, Ping Yu Lin, Ting An Liang, Kuan Hung Su, I. Cheng Lin, Chen Hao Wen, Wu Ching Chou, Hsiao Hsuan Hsu^*, Chun Hu Cheng^*

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, we investigate the ferroelectricity of stacked zirconium oxide and hafnium oxide (stacked HfZrO) with different thickness ratios under metal gate stress and simultaneously evaluate the electrical reliability of stacked ferroelectric films. Based on experimental results, we find that the stacked HfZrO films not only exhibited excellent ferroelectricity but also demonstrated a high performance on reliability. The optimized condition of the 45% Zr proportion exhibited a robust ferroelectric polarization value of 32.57 μC/cm², and a polarization current with a peak value of 159.98 μA. Besides this, the ferroelectric stacked HfZrO also demonstrated good reliability with a ten-year lifetime under >−2 V constant voltage stress. Therefore, the appropriate modulation of zirconium proportion in stacked HfZrO showed great promise for integrating in high-performance ferroelectric memory.

Original language	English
Article number	3306
Journal	Materials
Volume	16
Issue number	9
DOIs	https://doi.org/10.3390/ma16093306
Publication status	Published - 2023 May

Keywords

HfZrO
ferroelectric
hysteresis loop
reliability

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

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10.3390/ma16093306

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@article{9ab53597d03c47ee885b761830d38e8e,

title = "Ferroelectricity and Oxide Reliability of Stacked Hafnium–Zirconium Oxide Devices",

abstract = "In this work, we investigate the ferroelectricity of stacked zirconium oxide and hafnium oxide (stacked HfZrO) with different thickness ratios under metal gate stress and simultaneously evaluate the electrical reliability of stacked ferroelectric films. Based on experimental results, we find that the stacked HfZrO films not only exhibited excellent ferroelectricity but also demonstrated a high performance on reliability. The optimized condition of the 45% Zr proportion exhibited a robust ferroelectric polarization value of 32.57 μC/cm2, and a polarization current with a peak value of 159.98 μA. Besides this, the ferroelectric stacked HfZrO also demonstrated good reliability with a ten-year lifetime under >−2 V constant voltage stress. Therefore, the appropriate modulation of zirconium proportion in stacked HfZrO showed great promise for integrating in high-performance ferroelectric memory.",

keywords = "HfZrO, ferroelectric, hysteresis loop, reliability",

author = "Liao, {Ruo Yin} and Chen, {Hsuan Han} and Lin, {Ping Yu} and Liang, {Ting An} and Su, {Kuan Hung} and Lin, {I. Cheng} and Wen, {Chen Hao} and Chou, {Wu Ching} and Hsu, {Hsiao Hsuan} and Cheng, {Chun Hu}",

note = "Publisher Copyright: {\textcopyright} 2023 by the authors.",

year = "2023",

month = may,

doi = "10.3390/ma16093306",

language = "English",

volume = "16",

journal = "Materials",

issn = "1996-1944",

publisher = "MDPI AG",

number = "9",

}

TY - JOUR

T1 - Ferroelectricity and Oxide Reliability of Stacked Hafnium–Zirconium Oxide Devices

AU - Liao, Ruo Yin

AU - Chen, Hsuan Han

AU - Lin, Ping Yu

AU - Liang, Ting An

AU - Su, Kuan Hung

AU - Lin, I. Cheng

AU - Wen, Chen Hao

AU - Chou, Wu Ching

AU - Hsu, Hsiao Hsuan

AU - Cheng, Chun Hu

PY - 2023/5

Y1 - 2023/5

N2 - In this work, we investigate the ferroelectricity of stacked zirconium oxide and hafnium oxide (stacked HfZrO) with different thickness ratios under metal gate stress and simultaneously evaluate the electrical reliability of stacked ferroelectric films. Based on experimental results, we find that the stacked HfZrO films not only exhibited excellent ferroelectricity but also demonstrated a high performance on reliability. The optimized condition of the 45% Zr proportion exhibited a robust ferroelectric polarization value of 32.57 μC/cm2, and a polarization current with a peak value of 159.98 μA. Besides this, the ferroelectric stacked HfZrO also demonstrated good reliability with a ten-year lifetime under >−2 V constant voltage stress. Therefore, the appropriate modulation of zirconium proportion in stacked HfZrO showed great promise for integrating in high-performance ferroelectric memory.

AB - In this work, we investigate the ferroelectricity of stacked zirconium oxide and hafnium oxide (stacked HfZrO) with different thickness ratios under metal gate stress and simultaneously evaluate the electrical reliability of stacked ferroelectric films. Based on experimental results, we find that the stacked HfZrO films not only exhibited excellent ferroelectricity but also demonstrated a high performance on reliability. The optimized condition of the 45% Zr proportion exhibited a robust ferroelectric polarization value of 32.57 μC/cm2, and a polarization current with a peak value of 159.98 μA. Besides this, the ferroelectric stacked HfZrO also demonstrated good reliability with a ten-year lifetime under >−2 V constant voltage stress. Therefore, the appropriate modulation of zirconium proportion in stacked HfZrO showed great promise for integrating in high-performance ferroelectric memory.

KW - HfZrO

KW - ferroelectric

KW - hysteresis loop

KW - reliability

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DO - 10.3390/ma16093306

M3 - Article

AN - SCOPUS:85159381810

SN - 1996-1944

VL - 16

JO - Materials

JF - Materials

IS - 9

M1 - 3306

ER -

Ferroelectricity and Oxide Reliability of Stacked Hafnium–Zirconium Oxide Devices

Abstract

Keywords

ASJC Scopus subject areas

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