Ferroelectricity and Oxide Reliability of Stacked Hafnium–Zirconium Oxide Devices

Ruo Yin Liao, Hsuan Han Chen, Ping Yu Lin, Ting An Liang, Kuan Hung Su, I. Cheng Lin, Chen Hao Wen, Wu Ching Chou, Hsiao Hsuan Hsu*, Chun Hu Cheng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


In this work, we investigate the ferroelectricity of stacked zirconium oxide and hafnium oxide (stacked HfZrO) with different thickness ratios under metal gate stress and simultaneously evaluate the electrical reliability of stacked ferroelectric films. Based on experimental results, we find that the stacked HfZrO films not only exhibited excellent ferroelectricity but also demonstrated a high performance on reliability. The optimized condition of the 45% Zr proportion exhibited a robust ferroelectric polarization value of 32.57 μC/cm2, and a polarization current with a peak value of 159.98 μA. Besides this, the ferroelectric stacked HfZrO also demonstrated good reliability with a ten-year lifetime under >−2 V constant voltage stress. Therefore, the appropriate modulation of zirconium proportion in stacked HfZrO showed great promise for integrating in high-performance ferroelectric memory.

Original languageEnglish
Article number3306
Issue number9
Publication statusPublished - 2023 May


  • HfZrO
  • ferroelectric
  • hysteresis loop
  • reliability

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics


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