Ferroelectric undoped HfOxcapacitor with symmetric synaptic for neural network accelerator

Jun Dao Luo; Yu Ying Lai; Kuo Yu Hsiang; Chia Feng Wu; Yun Tien Yeh; Hao Tung Chung; Yi Shao Li; Kai Chi Chuang; Wei Shuo Li; Chun Yu Liao; Pin Guang Chen; Kuan Neng Chen; Min Hung Lee; Huang Chung Cheng

doi:10.1109/TED.2021.3052428

Ferroelectric undoped HfO_xcapacitor with symmetric synaptic for neural network accelerator

Jun Dao Luo^*, Yu Ying Lai, Kuo Yu Hsiang, Chia Feng Wu, Yun Tien Yeh, Hao Tung Chung, Yi Shao Li, Kai Chi Chuang, Wei Shuo Li, Chun Yu Liao, Pin Guang Chen, Kuan Neng Chen, Min Hung Lee^*, Huang Chung Cheng

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

A plasma-based ferroelectric undoped HfOx capacitor is fabricated using plasma-enhanced atomic layer deposition (PE-ALD), and the multilevel characteristics of synaptic behavior are investigated. A gradual ferroelectric phase transition in the material is confirmed by grazing incidence X-ray diffraction (GI-XRD) for different O2 plasma periods. The metal-ferroelectric-metal (MFM) capacitor presents excellent remnant polarization (Pr) up to 13 μC/cm2 and a switching endurance of more than 108 cycles. Superior small potentiation/depression nonlinearity (αp/αd = -0.08/-1.66 for voltage modulation stimulation) for synaptic training and almost symmetry training curve (|αp - αd|) are obtained. High stability under multilevel operation with five consecutive cycles of alternating potentiation and depression is exhibited without significant polarization variation for each training step (pulse).

Original language	English
Article number	9339849
Pages (from-to)	1374-1377
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	68
Issue number	3
DOIs	https://doi.org/10.1109/TED.2021.3052428
Publication status	Published - 2021 Mar

Keywords

Ferroelectric
multilevel
synaptic training
undoped HfO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2021.3052428

Cite this

Luo, J. D., Lai, Y. Y., Hsiang, K. Y., Wu, C. F., Yeh, Y. T., Chung, H. T., Li, Y. S., Chuang, K. C., Li, W. S., Liao, C. Y., Chen, P. G., Chen, K. N., Lee, M. H., & Cheng, H. C. (2021). Ferroelectric undoped HfO_xcapacitor with symmetric synaptic for neural network accelerator. IEEE Transactions on Electron Devices, 68(3), 1374-1377. Article 9339849. https://doi.org/10.1109/TED.2021.3052428

@article{c45b9b53e5ce41cb92f840ff3a8e61ba,

title = "Ferroelectric undoped HfOxcapacitor with symmetric synaptic for neural network accelerator",

abstract = "A plasma-based ferroelectric undoped HfOx capacitor is fabricated using plasma-enhanced atomic layer deposition (PE-ALD), and the multilevel characteristics of synaptic behavior are investigated. A gradual ferroelectric phase transition in the material is confirmed by grazing incidence X-ray diffraction (GI-XRD) for different O2 plasma periods. The metal-ferroelectric-metal (MFM) capacitor presents excellent remnant polarization (Pr) up to 13 μC/cm2 and a switching endurance of more than 108 cycles. Superior small potentiation/depression nonlinearity (αp/αd = -0.08/-1.66 for voltage modulation stimulation) for synaptic training and almost symmetry training curve (|αp - αd|) are obtained. High stability under multilevel operation with five consecutive cycles of alternating potentiation and depression is exhibited without significant polarization variation for each training step (pulse).",

keywords = "Ferroelectric, multilevel, synaptic training, undoped HfO",

author = "Luo, {Jun Dao} and Lai, {Yu Ying} and Hsiang, {Kuo Yu} and Wu, {Chia Feng} and Yeh, {Yun Tien} and Chung, {Hao Tung} and Li, {Yi Shao} and Chuang, {Kai Chi} and Li, {Wei Shuo} and Liao, {Chun Yu} and Chen, {Pin Guang} and Chen, {Kuan Neng} and Lee, {Min Hung} and Cheng, {Huang Chung}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2021",

month = mar,

doi = "10.1109/TED.2021.3052428",

language = "English",

volume = "68",

pages = "1374--1377",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Ferroelectric undoped HfOxcapacitor with symmetric synaptic for neural network accelerator

AU - Luo, Jun Dao

AU - Lai, Yu Ying

AU - Hsiang, Kuo Yu

AU - Wu, Chia Feng

AU - Yeh, Yun Tien

AU - Chung, Hao Tung

AU - Li, Yi Shao

AU - Chuang, Kai Chi

AU - Li, Wei Shuo

AU - Liao, Chun Yu

AU - Chen, Pin Guang

AU - Chen, Kuan Neng

AU - Lee, Min Hung

AU - Cheng, Huang Chung

PY - 2021/3

Y1 - 2021/3

N2 - A plasma-based ferroelectric undoped HfOx capacitor is fabricated using plasma-enhanced atomic layer deposition (PE-ALD), and the multilevel characteristics of synaptic behavior are investigated. A gradual ferroelectric phase transition in the material is confirmed by grazing incidence X-ray diffraction (GI-XRD) for different O2 plasma periods. The metal-ferroelectric-metal (MFM) capacitor presents excellent remnant polarization (Pr) up to 13 μC/cm2 and a switching endurance of more than 108 cycles. Superior small potentiation/depression nonlinearity (αp/αd = -0.08/-1.66 for voltage modulation stimulation) for synaptic training and almost symmetry training curve (|αp - αd|) are obtained. High stability under multilevel operation with five consecutive cycles of alternating potentiation and depression is exhibited without significant polarization variation for each training step (pulse).

AB - A plasma-based ferroelectric undoped HfOx capacitor is fabricated using plasma-enhanced atomic layer deposition (PE-ALD), and the multilevel characteristics of synaptic behavior are investigated. A gradual ferroelectric phase transition in the material is confirmed by grazing incidence X-ray diffraction (GI-XRD) for different O2 plasma periods. The metal-ferroelectric-metal (MFM) capacitor presents excellent remnant polarization (Pr) up to 13 μC/cm2 and a switching endurance of more than 108 cycles. Superior small potentiation/depression nonlinearity (αp/αd = -0.08/-1.66 for voltage modulation stimulation) for synaptic training and almost symmetry training curve (|αp - αd|) are obtained. High stability under multilevel operation with five consecutive cycles of alternating potentiation and depression is exhibited without significant polarization variation for each training step (pulse).

KW - Ferroelectric

KW - multilevel

KW - synaptic training

KW - undoped HfO

UR - http://www.scopus.com/inward/record.url?scp=85100497515&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85100497515&partnerID=8YFLogxK

U2 - 10.1109/TED.2021.3052428

DO - 10.1109/TED.2021.3052428

M3 - Article

AN - SCOPUS:85100497515

SN - 0018-9383

VL - 68

SP - 1374

EP - 1377

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 3

M1 - 9339849

ER -