Ferroelectric Polarization Enhancement in Hafnium-Based Oxides Through Capping Layer Engineering

Hsuan Han Chen, Ruo Yin Liao, Wu Ching Chou, Hsiao Hsuan Hsu*, Chun Hu Cheng*, Ching Chien Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

In this work, we investigate that the capping layer (CL) engineering of aluminum oxide (AlOx) on the dopant-free hafnium oxide (HfOx) and the hafnium zirconium oxide (HfZrOx) ferroelectric metal-ferroelectric-metal (MFM) capacitors. The AlOx CL featuring large bandgap and excellent thermal stability offers a stable interface favorable for ferroelectric phase transition. Therefore, the ferroelectric polarization and high-temperature leakage current of HfZrOx MFM capacitor can be largely improved due to the combination of zirconium doping and AlOx capping effect. From the analysis of interface thermodynamic stability and leakage current mechanism, the AlOx CL effectively alleviates interface defect traps between electrode and ferroelectric HfZrOx, which lowers high-temperature leakage current, reduces ferroelectric domains pinning, enhances ferroelectric polarization, and stabilizes the long-term endurance cycling.

Original languageEnglish
Pages (from-to)947-952
Number of pages6
JournalIEEE Journal of the Electron Devices Society
Volume10
DOIs
Publication statusPublished - 2022

Keywords

  • aluminum oxide
  • Ferroelectric
  • hafnium zirconium oxide
  • power consumption

ASJC Scopus subject areas

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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