@inproceedings{3993729b8dcf48d6a79c10c802381eda,
title = "Ferroelectric negative capacitance hetero-tunnel field-effect-transistors with internal voltage amplification",
abstract = "The ferroelectric negative capacitance (NC) hetero-tunnel FET is fabricated for the first time, demonstrating the significant improvement in subthreshold swing (∼double slope) and peak gm (118% enhancement) due to the internal voltage amplification. The peak gm enhancement at small VDS (-0.1V) indicates the intrinsic benefit by NC without lateral bias. The concept of coupling the ferroelectric polarization is proposed and synergistically contributes to the performance in future applications of steep subthreshold slope devices.",
author = "Lee, {M. H.} and Lin, {J. C.} and Wei, {Y. T.} and Chen, {C. W.} and Tu, {W. H.} and Zhuang, {H. K.} and M. Tang",
year = "2013",
doi = "10.1109/IEDM.2013.6724561",
language = "English",
isbn = "9781479923076",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
pages = "4.5.1--4.5.4",
booktitle = "2013 IEEE International Electron Devices Meeting, IEDM 2013",
note = "2013 IEEE International Electron Devices Meeting, IEDM 2013 ; Conference date: 09-12-2013 Through 11-12-2013",
}