Ferroelectric negative capacitance hetero-tunnel field-effect-transistors with internal voltage amplification

M. H. Lee, J. C. Lin, Y. T. Wei, C. W. Chen, W. H. Tu, H. K. Zhuang, M. Tang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Citations (Scopus)

Abstract

The ferroelectric negative capacitance (NC) hetero-tunnel FET is fabricated for the first time, demonstrating the significant improvement in subthreshold swing (∼double slope) and peak gm (118% enhancement) due to the internal voltage amplification. The peak gm enhancement at small VDS (-0.1V) indicates the intrinsic benefit by NC without lateral bias. The concept of coupling the ferroelectric polarization is proposed and synergistically contributes to the performance in future applications of steep subthreshold slope devices.

Original languageEnglish
Title of host publication2013 IEEE International Electron Devices Meeting, IEDM 2013
Pages4.5.1-4.5.4
DOIs
Publication statusPublished - 2013 Dec 1
Event2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States
Duration: 2013 Dec 92013 Dec 11

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2013 IEEE International Electron Devices Meeting, IEDM 2013
CountryUnited States
CityWashington, DC
Period13/12/913/12/11

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Lee, M. H., Lin, J. C., Wei, Y. T., Chen, C. W., Tu, W. H., Zhuang, H. K., & Tang, M. (2013). Ferroelectric negative capacitance hetero-tunnel field-effect-transistors with internal voltage amplification. In 2013 IEEE International Electron Devices Meeting, IEDM 2013 (pp. 4.5.1-4.5.4). [6724561] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2013.6724561