Ferroelectric negative capacitance hetero-tunnel field-effect-transistors with internal voltage amplification

M. H. Lee, J. C. Lin, Y. T. Wei, C. W. Chen, W. H. Tu, H. K. Zhuang, M. Tang

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    20 Citations (Scopus)

    Abstract

    The ferroelectric negative capacitance (NC) hetero-tunnel FET is fabricated for the first time, demonstrating the significant improvement in subthreshold swing (∼double slope) and peak gm (118% enhancement) due to the internal voltage amplification. The peak gm enhancement at small VDS (-0.1V) indicates the intrinsic benefit by NC without lateral bias. The concept of coupling the ferroelectric polarization is proposed and synergistically contributes to the performance in future applications of steep subthreshold slope devices.

    Original languageEnglish
    Title of host publication2013 IEEE International Electron Devices Meeting, IEDM 2013
    Pages4.5.1-4.5.4
    DOIs
    Publication statusPublished - 2013 Dec 1
    Event2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States
    Duration: 2013 Dec 92013 Dec 11

    Publication series

    NameTechnical Digest - International Electron Devices Meeting, IEDM
    ISSN (Print)0163-1918

    Other

    Other2013 IEEE International Electron Devices Meeting, IEDM 2013
    CountryUnited States
    CityWashington, DC
    Period2013/12/092013/12/11

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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