Ferroelectric HfZrOx FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

Kuan Ting Chen; Siang Sheng Gu; Zheng Ying Wang; Chun Yu Liao; Yu Chen Chou; Ruo Chun Hong; Shih Yao Chen; Hong Yu Chen; Gao Yu Siang; Chieh Lo; Pin Guang Chen; M. H. Liao; Kai Shin Li; Shu Tong Chang; Min Hung Lee

doi:10.1109/JEDS.2018.2863283

Ferroelectric HfZrO_x FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

Kuan Ting Chen, Siang Sheng Gu, Zheng Ying Wang, Chun Yu Liao, Yu Chen Chou, Ruo Chun Hong, Shih Yao Chen, Hong Yu Chen, Gao Yu Siang, Chieh Lo, Pin Guang Chen, M. H. Liao, Kai Shin Li, Shu Tong Chang, Min Hung Lee^*

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Ferroelectric-Hf_1−xZr_xO₂ FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (V_T-shift), which is based on the capacitance matching concept. The minimum reverse SS = 45 mV/dec and 52 mV/dec are obtained experimentally for SOI and bulk-Si, respectively. The steep SS range (<60 mV/dec) is extended from ∼2.5 (bulk-Si) decades to ∼3.5 decades SOI. Reverse-drain-induced barrier lowering and negative differential resistance are confirmed at subthreshold region and weak inversion region, respectively.

Original language	English
Pages (from-to)	900-904
Number of pages	5
Journal	IEEE Journal of the Electron Devices Society
Volume	6
DOIs	https://doi.org/10.1109/JEDS.2018.2863283
Publication status	Published - 2018

Keywords

Ferroelectric
negative differential resistance

ASJC Scopus subject areas

Biotechnology
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/JEDS.2018.2863283

Cite this

Chen, K. T., Gu, S. S., Wang, Z. Y., Liao, C. Y., Chou, Y. C., Hong, R. C., Chen, S. Y., Chen, H. Y., Siang, G. Y., Lo, C., Chen, P. G., Liao, M. H., Li, K. S., Chang, S. T., & Lee, M. H. (2018). Ferroelectric HfZrO_x FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance). IEEE Journal of the Electron Devices Society, 6, 900-904. https://doi.org/10.1109/JEDS.2018.2863283

Chen, KT, Gu, SS, Wang, ZY, Liao, CY, Chou, YC, Hong, RC, Chen, SY, Chen, HY, Siang, GY, Lo, C, Chen, PG, Liao, MH, Li, KS, Chang, ST & Lee, MH 2018, 'Ferroelectric HfZrO_x FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)', IEEE Journal of the Electron Devices Society, vol. 6, pp. 900-904. https://doi.org/10.1109/JEDS.2018.2863283

@article{29752bf32d9743a1b235585398b32224,

title = "Ferroelectric HfZrOx FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)",

abstract = "Ferroelectric-Hf1−xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept. The minimum reverse SS = 45 mV/dec and 52 mV/dec are obtained experimentally for SOI and bulk-Si, respectively. The steep SS range (<60 mV/dec) is extended from ∼2.5 (bulk-Si) decades to ∼3.5 decades SOI. Reverse-drain-induced barrier lowering and negative differential resistance are confirmed at subthreshold region and weak inversion region, respectively.",

keywords = "Ferroelectric, negative differential resistance",

author = "Chen, {Kuan Ting} and Gu, {Siang Sheng} and Wang, {Zheng Ying} and Liao, {Chun Yu} and Chou, {Yu Chen} and Hong, {Ruo Chun} and Chen, {Shih Yao} and Chen, {Hong Yu} and Siang, {Gao Yu} and Chieh Lo and Chen, {Pin Guang} and Liao, {M. H.} and Li, {Kai Shin} and Chang, {Shu Tong} and Lee, {Min Hung}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.",

year = "2018",

doi = "10.1109/JEDS.2018.2863283",

language = "English",

volume = "6",

pages = "900--904",

journal = "IEEE Journal of the Electron Devices Society",

issn = "2168-6734",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Ferroelectric HfZrOx FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

AU - Chen, Kuan Ting

AU - Gu, Siang Sheng

AU - Wang, Zheng Ying

AU - Liao, Chun Yu

AU - Chou, Yu Chen

AU - Hong, Ruo Chun

AU - Chen, Shih Yao

AU - Chen, Hong Yu

AU - Siang, Gao Yu

AU - Lo, Chieh

AU - Chen, Pin Guang

AU - Liao, M. H.

AU - Li, Kai Shin

AU - Chang, Shu Tong

AU - Lee, Min Hung

PY - 2018

Y1 - 2018

N2 - Ferroelectric-Hf1−xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept. The minimum reverse SS = 45 mV/dec and 52 mV/dec are obtained experimentally for SOI and bulk-Si, respectively. The steep SS range (<60 mV/dec) is extended from ∼2.5 (bulk-Si) decades to ∼3.5 decades SOI. Reverse-drain-induced barrier lowering and negative differential resistance are confirmed at subthreshold region and weak inversion region, respectively.

AB - Ferroelectric-Hf1−xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept. The minimum reverse SS = 45 mV/dec and 52 mV/dec are obtained experimentally for SOI and bulk-Si, respectively. The steep SS range (<60 mV/dec) is extended from ∼2.5 (bulk-Si) decades to ∼3.5 decades SOI. Reverse-drain-induced barrier lowering and negative differential resistance are confirmed at subthreshold region and weak inversion region, respectively.

KW - Ferroelectric

KW - negative differential resistance

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JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

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