Ferroelectric HfZrOx FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

Kuan Ting Chen, Siang Sheng Gu, Zheng Ying Wang, Chun Yu Liao, Yu Chen Chou, Ruo Chun Hong, Shih Yao Chen, Hong Yu Chen, Gao Yu Siang, Chieh Lo, Pin Guang Chen, M. H. Liao, Kai Shin Li, Shu Tong Chang, Min Hung Lee*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

Ferroelectric-Hf1−xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept. The minimum reverse SS = 45 mV/dec and 52 mV/dec are obtained experimentally for SOI and bulk-Si, respectively. The steep SS range (<60 mV/dec) is extended from ∼2.5 (bulk-Si) decades to ∼3.5 decades SOI. Reverse-drain-induced barrier lowering and negative differential resistance are confirmed at subthreshold region and weak inversion region, respectively.

Original languageEnglish
Pages (from-to)900-904
Number of pages5
JournalIEEE Journal of the Electron Devices Society
Volume6
DOIs
Publication statusPublished - 2018

Keywords

  • Ferroelectric
  • negative differential resistance

ASJC Scopus subject areas

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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