Ferroelectric HfZrO2 FETs for steep switch onset

K. T. Chen; C. Y. Liao; H. Y. Chen; C. Lo; G. Y. Siang; Y. Y. Lin; Y. J. Tseng; C. Chang; C. Y. Chueh; Y. J. Yang; M. H. Liao; K. S. Li; S. T. Chang; M. H. Lee

doi:10.1016/j.mee.2019.110991

Ferroelectric HfZrO₂ FETs for steep switch onset

K. T. Chen, C. Y. Liao, H. Y. Chen, C. Lo, G. Y. Siang, Y. Y. Lin, Y. J. Tseng, C. Chang, C. Y. Chueh, Y. J. Yang, M. H. Liao, K. S. Li, S. T. Chang, M. H. Lee^*

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The ferroelectric HfZrO₂ (HZO) is focused on coercive voltage for onset of negative capacitance (NC) with sub-2.3k_bT/q subthreshold swing (SS). The Fe-FETs with ultra-thin HZO (<10 nm) is experimentally obtained gradual transition on SS and V_T shift on annealing temperatures and sweep ranges. The polarization hysteresis of metal/ferroelectric/metal (MFM) is employed to match FET load line and balances the charge from positive capacitance (PC) to NC with increasing applied bias. The adjustment for charge of FET load line to reduce NC onset voltage is discussed. The feasible concept of coupling the ferroelectric Hf-based oxide is practicable to following current CMOS architectures.

Original language	English
Article number	110991
Journal	Microelectronic Engineering
Volume	215
DOIs	https://doi.org/10.1016/j.mee.2019.110991
Publication status	Published - 2019 Jul 15

Keywords

Fe-FETs
HZO
Negative capacitance
Onset voltage

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mee.2019.110991

Cite this

@article{609782a80dae4f61ac4eb15fb72472da,

title = "Ferroelectric HfZrO2 FETs for steep switch onset",

abstract = "The ferroelectric HfZrO2 (HZO) is focused on coercive voltage for onset of negative capacitance (NC) with sub-2.3kbT/q subthreshold swing (SS). The Fe-FETs with ultra-thin HZO (<10 nm) is experimentally obtained gradual transition on SS and VT shift on annealing temperatures and sweep ranges. The polarization hysteresis of metal/ferroelectric/metal (MFM) is employed to match FET load line and balances the charge from positive capacitance (PC) to NC with increasing applied bias. The adjustment for charge of FET load line to reduce NC onset voltage is discussed. The feasible concept of coupling the ferroelectric Hf-based oxide is practicable to following current CMOS architectures.",

keywords = "Fe-FETs, HZO, Negative capacitance, Onset voltage",

author = "Chen, {K. T.} and Liao, {C. Y.} and Chen, {H. Y.} and C. Lo and Siang, {G. Y.} and Lin, {Y. Y.} and Tseng, {Y. J.} and C. Chang and Chueh, {C. Y.} and Yang, {Y. J.} and Liao, {M. H.} and Li, {K. S.} and Chang, {S. T.} and Lee, {M. H.}",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

month = jul,

day = "15",

doi = "10.1016/j.mee.2019.110991",

language = "English",

volume = "215",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

}

TY - JOUR

T1 - Ferroelectric HfZrO2 FETs for steep switch onset

AU - Chen, K. T.

AU - Liao, C. Y.

AU - Chen, H. Y.

AU - Lo, C.

AU - Siang, G. Y.

AU - Lin, Y. Y.

AU - Tseng, Y. J.

AU - Chang, C.

AU - Chueh, C. Y.

AU - Yang, Y. J.

AU - Liao, M. H.

AU - Li, K. S.

AU - Chang, S. T.

AU - Lee, M. H.

PY - 2019/7/15

Y1 - 2019/7/15

N2 - The ferroelectric HfZrO2 (HZO) is focused on coercive voltage for onset of negative capacitance (NC) with sub-2.3kbT/q subthreshold swing (SS). The Fe-FETs with ultra-thin HZO (<10 nm) is experimentally obtained gradual transition on SS and VT shift on annealing temperatures and sweep ranges. The polarization hysteresis of metal/ferroelectric/metal (MFM) is employed to match FET load line and balances the charge from positive capacitance (PC) to NC with increasing applied bias. The adjustment for charge of FET load line to reduce NC onset voltage is discussed. The feasible concept of coupling the ferroelectric Hf-based oxide is practicable to following current CMOS architectures.

AB - The ferroelectric HfZrO2 (HZO) is focused on coercive voltage for onset of negative capacitance (NC) with sub-2.3kbT/q subthreshold swing (SS). The Fe-FETs with ultra-thin HZO (<10 nm) is experimentally obtained gradual transition on SS and VT shift on annealing temperatures and sweep ranges. The polarization hysteresis of metal/ferroelectric/metal (MFM) is employed to match FET load line and balances the charge from positive capacitance (PC) to NC with increasing applied bias. The adjustment for charge of FET load line to reduce NC onset voltage is discussed. The feasible concept of coupling the ferroelectric Hf-based oxide is practicable to following current CMOS architectures.

KW - Fe-FETs

KW - HZO

KW - Negative capacitance

KW - Onset voltage

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U2 - 10.1016/j.mee.2019.110991

DO - 10.1016/j.mee.2019.110991

M3 - Article

AN - SCOPUS:85065909926

SN - 0167-9317

VL - 215

JO - Microelectronic Engineering

JF - Microelectronic Engineering

M1 - 110991

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