Ferroelectric HfZrOₓ FETs on SOI Substrate with Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

K. T. Chen, S. S. Gu, Z. Y. Wang, C. Y. Liao, Y. C. Chou, R. C. Hong, S. Y. Chen, H. Y. Chen, G. Y. Siang, J. Le, P. G. Chen, M. H. Liao, K. S. Li, S. T. Chang, M. H. Lee

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