Ferroelectric HfZrOₓ FETs on SOI Substrate with Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

K. T. Chen, S. S. Gu, Z. Y. Wang, C. Y. Liao, Y. C. Chou, R. C. Hong, S. Y. Chen, H. Y. Chen, G. Y. Siang, J. Le, P. G. Chen, M. H. Liao, K. S. Li, S. T. Chang, M. H. Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Ferroelectric HZO (ferroelectric-Hf₁₋ₓZrₓO₂) FETs on SOI (silicon on insulator) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept. The minimum reverse SS = 45 mV/dec and 52 mV/dec are obtained experimentally for SOI and bulk-Si, respectively. The steep SS range (<60 mV/dec) is extended from ∼2.5 (bulk-Si) decades to ∼3.5 decades (SOI). Reverse-DIBL (drain-induced barrier lowering) and NDR (negative differential resistance) are confirmed at subthreshold region and weak inversion region, respectively.

Original languageEnglish
JournalIEEE Journal of the Electron Devices Society
DOIs
Publication statusAccepted/In press - 2018 Aug 3
Externally publishedYes

Keywords

  • Annealing
  • Capacitance
  • Ferroelectric
  • Field effect transistors
  • Hysteresis
  • Load modeling
  • Logic gates
  • Negative Differential Resistance.
  • Silicon

ASJC Scopus subject areas

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Chen, K. T., Gu, S. S., Wang, Z. Y., Liao, C. Y., Chou, Y. C., Hong, R. C., Chen, S. Y., Chen, H. Y., Siang, G. Y., Le, J., Chen, P. G., Liao, M. H., Li, K. S., Chang, S. T., & Lee, M. H. (Accepted/In press). Ferroelectric HfZrOₓ FETs on SOI Substrate with Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance). IEEE Journal of the Electron Devices Society. https://doi.org/10.1109/JEDS.2018.2863283