Ferroelectric HfZrO FETs for Emerging Technologies

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The prospect of ferroelectric Hf-based oxide by ALD (Atomic Layer Deposition) with bistable states nature feature of hysteresis loops satisfies the demands of the storage signal purpose for memory and the voltage amplification concept for negative capacitance (NC). Si doping in HfO2 to form a ferroelectric material was discovered by Qimonda AG in 2010; recently, ferroelectric Hf-based oxide materials have been used in many applications, such as memory, negative capacitance, passive component, and solar cells. For the Al (Artificial lntelligence) and loT (lnternet of Things) era, the requirement of scaling down supply voltage VDD and power consumption for low power devices is the pursued goals for CMOS and memory applications. The ferroelectric gate stack is integrated into FETs with NC effect for subthreshold swing (SS) improvement. The feasible concept of coupling the polarization Hf-based oxide is practicable to following current CMOS architectures.

Original languageEnglish
Title of host publication2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages148
Number of pages1
ISBN (Electronic)9781728142326
DOIs
Publication statusPublished - 2020 Aug
Event2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 - Hsinchu, Taiwan
Duration: 2020 Aug 102020 Aug 13

Publication series

Name2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

Conference

Conference2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
CountryTaiwan
CityHsinchu
Period2020/08/102020/08/13

ASJC Scopus subject areas

  • Artificial Intelligence
  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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