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Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on
M. H. Lee
*
, Y. T. Wei
, J. C. Lin
, C. W. Chen
, W. H. Tu
, M. Tang
*
Corresponding author for this work
Undergraduate Program of Electro-Optical Engineering
Research output
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Contribution to journal
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Article
›
peer-review
58
Citations (Scopus)
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INIS
power
100%
ferroelectric materials
100%
field effect transistors
100%
voltage
50%
range
25%
applications
25%
devices
25%
polarization
25%
coupling
25%
capacitance
25%
stacks
25%
amplification
25%
Engineering
Steep Turn
100%
Tunnel field effect transistors
100%
Electric Power Utilization
50%
Bias Voltage
50%
Gate Stack
50%
Subthreshold Slope
50%
Beneficial Effect
50%